Datasheet > MXSMBJ110CATR

MXSMBJ110CATR

更新时间： 2024-11-13 04:29:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		电视
页数	文件大小	规格书
4页	161K
描述
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MXSMBJ110CATR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

SURFACE MOUNT 600 W

Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 5.0 to 170 V standoff voltages (V_WM

)

LEVELS

M, MA, MX, MXL

DEVICES

MSMBJ5.0A thru MSMBJ170CA, e3

and MSMBG5.0A thru MSMBG170CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Optional up screening available by replacing the M prefix with MA, MX or MXL. These

prefixes specify various screening and conformance inspection options based on

MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.

Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to

MP6KE200CA

Refer to table below

for dimensions

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Protection from switching transients & induced RF

Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1: MSMB5.0A to MSMB120CA

Class 2: MSMB5.0A to MSMB60CA

Class 3: MSMB5.0A to MSMB30CA

Class 4: MSMB5.0A to MSMB15CA

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1: MSMB5.0A to MSMB36CA

Class 2: MSMB5.0A to MSMB18CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000 μs (also see Figures 1, 2, and

3) with impulse repetition rate (duty factor) of 0.01 % or less

t_clamping(0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 °C to +150 °C

Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted

on FR4 PC board (1oz Cu) with recommended footprint (see page 2)

Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when

mounted on FR4 PC board with recommended footprint (see page 2)

Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01000 Rev B, Sept 2011

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MXSMBJ110CATR相关器件

型号	品牌	获取价格	描述	数据表
MXSMBJ110E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXSMBJ110E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXSMBJ11A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ11A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ11AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ11AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ11AE3TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXSMBJ11ATR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN
MXSMBJ11ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ11C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

与MXSMBJ110CATR相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

MXSMBJ110CATR

MXSMBJ110CATR 数据手册

与MXSMBJ110CATR相关器件

与MXSMBJ110CATR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MXSMBJ110CATR

MXSMBJ110CATR 数据手册

与MXSMBJ110CATR相关器件

与MXSMBJ110CATR相关文章

您还可以找

您在本页遇到什么问题？