Datasheet > MXRT100KP43TR

MXRT100KP43TR

更新时间： 2024-11-24 03:30:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	138K
描述
Trans Voltage Suppressor Diode, 100000W, 43V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MXRT100KP43TR 数据手册

RT100KP33A thru RT100KP400CA, e3

Preferred 100 kW Transient Voltage

Suppressor for AIRCRAFT POWER

BUS PROTECTION

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

Microsemi’s 100 kW Transient Voltage Suppressors (TVSs) are designed

for aircraft applications requiring high power transient protection with a

comparatively small axial-leaded package size. This includes various

threats such as “Waveform 4” at 6.4/69 µs per RTCA/DO-160E Section 22.

It is also available with screening in accordance with MIL-PRF-19500 or

avionics screening as described in the Features section herein. It may also

be optionally acquired with RoHS Compliant (annealed matte-Tin finish)

with an e3 suffix added to the part number. Microsemi also offers a broad

spectrum of other TVSs to meet your needs.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Available in both Unidirectional and Bidirectional

construction (Bidirectional with C or CA suffix)

•

Protection from high power switching transients,

induced RF, and lightning threats with comparatively

small package size (0.25 inch diameter)

•

TVS selection for 33 to 400 V Standoff Voltages (V_WM

Suppresses transients up to 100 kW @ 6.4/69 μs

Fast response with less than 5 ns turn-on time.

)

•

Protection from ESD and EFT per IEC61000-4-2 and

IEC61000-4-4

Pin injection protection per RTCA/DO-160E up to

Level 4 for Waveform 4 (6.4/69 µs) on all devices

Optional 100% screening for avionics grade is available

by adding MA prefix to part number for added 100%

temperature cycle -55^oC to +125^oC (10X), surge (3X) in

each direction, 24 hours HTRB in each direction, and post

test (V_BRand I_D)

Pin injection protection per RTCA/DO-160E up to

Level 5 for Waveform 4 (6.4/69 µs) on device types

RT100KP33A or CA up to RT100KP260A or CA

•

Pin injection protection per RTCA/DO-160E up to

Level 3 for Waveform 5A (40/120 µs) on all devices

•

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV are also available by adding

MQ, MX, or MV prefixes respectively to part numbers.

Pin injection protection per RTCA/DO-160E up to

Level 4 for Waveform 5A (40/120 µs) on device types

RT100KP33 A or CA up to RT100KP64A or CA

•

Moisture classification is Level 1 with no dry pack required

per IPC/JEDEC J-STD-020B.

•

Consult Factory for other voltages with similar Peak

Pulse Power capabilities.

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL & PACKAGING

•

Peak Pulse Power dissipation at 25ºC: 100 kW at 6.4/69 µs

waveform in Figure 8 (also see figures 1 and 2)

•

CASE: Void free transfer molded thermosetting

epoxy meeting UL94V-O requirements

FINISH: Tin-Lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

Polarity: Cathode marked with band for

•

Impulse repetition rate: 0.005

t_clamping(0 volts to V_BRmin): <100 ps theoretical for

unidirectional and <5 ns for bidirectional

Operating & storage temperatures: -55^oC to +150^oC

unidirectional (no band required for bi-directional)

•

MARKING: Manufacturers logo and part number.

Add prefix MA, MQ, MX, etc., for screened parts.

Thermal resistance: 17.5C/W junction to lead, or 77.5C/W

junction to ambient when mounted on FR4 PC board with 4

mm²copper pads (1 oz ) and track width 1 mm, length 25

Steady-state power dissipation: 7 Watts @ T_L= 27.5^oC or

1.61 Watts at TA =25 ^oC when mounted on FR4 PC Board

described for thermal resistance above

•

WEIGHT: 1.7 grams (approximate)

TAPE & REEL option: Standard per EIA-296 for

axial package (add “TR” suffix to part number)

•

Package dimensions: See last page

•

Forward surge: 250 Amps 8.3 ms half-sine wave for

unidirectional devices only

Solder Temperatures: 260^oC for 10 s maximum

8-22-2007

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MXRT100KP43TR相关器件

型号	品牌	获取价格	描述	数据表
MXRT100KP45	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 45V V(RWM), Unidirectional, 1 Element, Silicon, P
MXRT100KP45A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 45V V(RWM), Unidirectional, 1 Element, Silicon, P
MXRT100KP45A/TR	MICROSEMI	获取价格	暂无描述
MXRT100KP45AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 45V V(RWM), Unidirectional, 1 Element, Silicon, R
MXRT100KP45AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 45V V(RWM), Unidirectional, 1 Element, Silicon, R
MXRT100KP45AE3TR	MICROSEMI	获取价格	100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN
MXRT100KP45ATR	MICROSEMI	获取价格	100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2
MXRT100KP45ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 45V V(RWM), Unidirectional, 1 Element, Silicon, R
MXRT100KP45C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 45V V(RWM), Bidirectional, 1 Element, Silicon, PL
MXRT100KP45CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 45V V(RWM), Bidirectional, 1 Element, Silicon, PL

与MXRT100KP43TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

MXRT100KP43TR

MXRT100KP43TR 数据手册

与MXRT100KP43TR相关器件

与MXRT100KP43TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MXRT100KP43TR

MXRT100KP43TR 数据手册

与MXRT100KP43TR相关器件

与MXRT100KP43TR相关文章

您还可以找

您在本页遇到什么问题？