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MXP6KE75AE3 PDF预览

MXP6KE75AE3

更新时间: 2024-10-29 19:23:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 470K
描述
Trans Voltage Suppressor Diode, 600W, 64.1V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

MXP6KE75AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.48最大击穿电压:78.8 V
最小击穿电压:71.3 V击穿电压标称值:75 V
外壳连接:ISOLATED最大钳位电压:103 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:64.1 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MXP6KE75AE3 数据手册

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MXP6KE75AE3 替代型号

型号 品牌 替代类型 描述 数据表
MXP6KE75A MICROSEMI

类似代替

Trans Voltage Suppressor Diode, 600W, 64.1V V(RWM), Unidirectional, 1 Element, Silicon, PL

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