Datasheet > MXP6KE36ATRE3

MXP6KE36ATRE3

更新时间： 2024-10-30 06:02:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	320K
描述
Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MXP6KE36ATRE3 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

- Economical series for thru hole mounting

- Unidirectional (A) and Bidirectional (CA) construction

- Selections for 5.8 to 171 V standoff voltages (VWM)

600W Transient Voltage Suppressor

LEVELS

M, MA, MX, MXL

DEVICES

MP6KE6.8A thru MP6KE200CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes

specify various screening and conformance inspection options based on MIL-PRF-19500.

Refer to MicroNote 129 for more details on the screening options.



Surface mount equivalents available as MSMBJ5.0A to MSMBJ170CA

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

T-18

Economical TVS series for thru-hole mounting

Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Protection from switching transients & induced RF

Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1: MP6KE6.8A to MP6KE130A or CA

Class 2: MP6KE6.8A to MP6KE68A or CA

Class 3: MP6KE6.8A to MP6KE36A or CA

Class 4: MP6KE6.8A to MP6KE18A or CA

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1: MP6KE6.8A to MP6KE43A or CA

Class 2: MP6KE6.8A to MP6KE22A or CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ^°C: 600 watts at 10/1000 μs (also see Figures 1,2, and 3)

with impulse repetition rate (duty factor) of 0.01 % or less

t_clamping(0 V to V_(BR)min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 ^°C to +150 ^°C

Thermal Resistance: 25 ^°C/W at 3/8 inch (10 mm) lead length from body, or 85 C/W junction

to ambient when mounted on FR4 PC board with 4 mm²copper pads (1 oz) and track width 1

mm, length 25 mm

Steady-State Power: 5 watts @ T_L=25 C 3/8 inch (10 mm) from body, or 1.47 W when

mounted on FR4 PC board described for thermal resistance

Forward Voltage at 25 C: 3.5 Volts maximum @ 100 Amp peak impulse of 8.3 ms half-sine

wave (unidirectional only)

Solder temperatures: 260 ^°C for 10 s (maximum)

RF01007 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MXP6KE36ATRE3相关器件

型号	品牌	获取价格	描述	数据表
MXP6KE36C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MXP6KE36CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MXP6KE36CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MXP6KE36CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MXP6KE36CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MXP6KE36CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MXP6KE36CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MXP6KE36E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Unidirectional, 1 Element, Silicon, RO
MXP6KE36TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Unidirectional, 1 Element, Silicon, PL
MXP6KE39	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 31.6V V(RWM), Unidirectional, 1 Element, Silicon, PL

与MXP6KE36ATRE3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

15
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

18
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

42
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

49

产品中心

服务支持

精选活动

关于我们

帮助中心

MXP6KE36ATRE3

MXP6KE36ATRE3 数据手册

与MXP6KE36ATRE3相关器件

与MXP6KE36ATRE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MXP6KE36ATRE3

MXP6KE36ATRE3 数据手册

与MXP6KE36ATRE3相关器件

与MXP6KE36ATRE3相关文章

您还可以找

您在本页遇到什么问题？