是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DO-41 | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.42 | 最大击穿电压: | 13.7 V |
最小击穿电压: | 12.4 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-204AL |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
最大非重复峰值反向功率耗散: | 400 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.13 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 11.1 V | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXP4KE13CATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 11.1V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
MXP4KE13CATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 11.1V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
MXP4KE13CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode | |
MXP4KE13E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode | |
MXP4KE13E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MXP4KE13TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MXP4KE150A | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXP4KE150AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXP4KE150AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXP4KE150ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO- |