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MXP18-C PDF预览

MXP18-C

更新时间: 2024-11-05 22:34:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电光电器件二极管光电二极管
页数 文件大小 规格书
1页 47K
描述
Monolithic Photodiode Array-Chip

MXP18-C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:compliant
HTS代码:8541.40.60.50风险等级:5.67
Is Samacsys:N红外线范围:YES
JESD-609代码:e0标称光电流:0.003 mA
峰值波长:850 nm最小反向击穿电压:20 V
形状:RECTANGULAR端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

MXP18-C 数据手册

  
2830 S. Fairview St.  
Santa Ana, CA 92704  
PH: 714.979.8220  
FAX: 714.557.5989  
MXP18-C  
Monolithic Photodiode Array - Chip  
Features  
Dielectrically Isolated Diodes  
Aluminum Wire bondable  
• Backside Metallization - Gold  
• Die Attach methods: Eutectic or Epoxy  
Electrical Characteristics @ 25oC  
SYMBOL  
VOC  
CHARACTERISTIC  
Open Circuit Voltage  
Short Circuit Current  
CONDITIONS  
10 mW/cm2, wavelength = 850 nm  
10 mW/cm2, wavelength = 850 nm  
IR = 10 uA  
MIN  
9.5  
3
TYP MAX UNITS  
Volts  
uA  
Volts  
ISC  
VB  
Reverse Breakdown Voltage  
20  
Data Sheet # MSC1337.PDF  
Updated:June 1999  
O p t o P r o d u c t s  

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