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MXLSMCJLCE8.0AE3 PDF预览

MXLSMCJLCE8.0AE3

更新时间: 2024-11-14 21:20:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 1096K
描述
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN

MXLSMCJLCE8.0AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.2
Is Samacsys:N其他特性:HIGH RELIABILITY
最大击穿电压:9.83 V最小击穿电压:8.89 V
击穿电压标称值:9.36 V最大钳位电压:13.6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:8 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MXLSMCJLCE8.0AE3 数据手册

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MXLSMCJLCE8.0AE3 替代型号

型号 品牌 替代类型 描述 数据表
MSMCJLCE8.0AE3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMCJ8.0A LITTELFUSE

类似代替

Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors
1.5SMCJ8.0A DIOTEC

类似代替

Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes

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