Datasheet > MXLSMCGLCE160ATR

MXLSMCGLCE160ATR

更新时间： 2024-11-13 06:24:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	316K
描述
Trans Voltage Suppressor Diode, 1500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, PLASTIC, SMCG, 2 PIN

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MXLSMCGLCE160ATR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

- Unidirectional (A) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 6.5 to 170 V standoff voltages (VWM)

SURFACE MOUNT

1500 Watt Low Capacitance

Transient Voltage Suppressor

LEVELS

M, MA, MX, MXL

DEVICES

MSMCJLCE6.5A thru MSMCJLCE170A, e3

and MSMCGLCE6.5A thru MSMCGLCE170A, e3

FEATURES

High reliability controlled devices with fabrication and assembly lot traceability

100% surge tested devices

Low capacitance of 100 pF or less

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes

specify various screening and conformance inspection options based on MIL-PRF-19500. Refer

to MicroNote 129 for more details on the screening options.

Axial-lead equivalent packages for thru-hole mounting available as MLCE6.5A to MLCE170CA

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

1500 Watts of Peak Pulse Power at 10/1000 s

Low capacitance for data line protection to 1 MHz

Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in

RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC

429, Part 1, par 2.4.1.1)

IEC 61000-4-2 ESD 15 kV (air), 8 kV (contact)

IEC 61000-4-5 (lightning) as further detailed in MLCE6.5 thru MLCE170A data sheet

T1/E1 Line Cards

Base Stations, WAN & XDSL Interfaces

CSU/DSU Equipment

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and 3)

with impulse repetition rate (duty factor) of 0.01 % or less

Clamping Factor: 1.40 @ Full Rated power:

1.30 @ 50 % Rated power

t_clamping(0 V to V_BRmin): Less than 5x10^-9seconds

Operating and Storage temperatures: -65 ºC to +150 ºC

Steady State power dissipation: 5.0W @ TL = 50 ºC

Thermal Resistance: 20 ºC /W (typical junction to lead (tab) at mounting plane

When pulse testing, do not pulse in opposite direction. (See “Schematic Applications” section

herein and Figures 5 & 6 for further protection in both directions)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01002 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

12 3 4

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与MXLSMCGLCE160ATR相关器件

型号	品牌	获取价格	描述	数据表
MXLSMCGLCE160E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 160V V(RWM), Unidirectional,
MXLSMCGLCE160E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 160V V(RWM), Unidirectional,
MXLSMCGLCE16A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXLSMCGLCE16AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXLSMCGLCE16AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXLSMCGLCE16ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXLSMCGLCE16E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 16V V(RWM), Unidirectional,
MXLSMCGLCE16E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 16V V(RWM), Unidirectional,
MXLSMCGLCE17/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 17V V(RWM), Unidirectional,
MXLSMCGLCE170	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 170V V(RWM), Unidirectional,

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