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MXLPLAD15KP33AE3 PDF预览

MXLPLAD15KP33AE3

更新时间： 2024-11-06 06:37:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 290K
描述
Trans Voltage Suppressor Diode, 15000W, 33V V(RWM), Unidirectional, 1 Element, Silicon

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中文翻译

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MXLPLAD15KP33AE3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G1Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.53其他特性：HIGH RELIABILITY
最大击穿电压：40.6 V最小击穿电压：36.7 V
击穿电压标称值：38.65 V外壳连接：CATHODE
最大钳位电压：53.3 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PSSO-G1最大非重复峰值反向功率耗散：15000 W
元件数量：1端子数量：1
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：2.5 W
认证状态：Not Qualified参考标准：MIL-19500
最大重复峰值反向电压：33 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXLPLAD15KP33AE3 数据手册

 浏览型号MXLPLAD15KP33AE3的Datasheet PDF文件第2页浏览型号MXLPLAD15KP33AE3的Datasheet PDF文件第3页浏览型号MXLPLAD15KP33AE3的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 15,000 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 7.0 to 200 V standoff voltages (VWM  
- Fast response  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MPLAD15KP7.0A thru MPLAD15KP200CA, e3  
FEATURES  
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Low profile surface mount  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote  
129 for more details on the screening options  
.
.
.
.
Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
Class 1,2,3,4: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
.
.
o
o
o
Class 2,3: MPLAD15KP7.0A to 200CA  
Class 4: MPLAD15KP5.0 to 54CA  
.
.
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):  
o
o
Level 4: MPLAD15KP7.0A to 200CA  
Level 5: MPLAD15KP7.0A to 100CA  
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):  
Level 4: MPLAD15KP7.0A to 28CA  
o
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with  
impulse repetition rate (duty factor) of 0.05% or less  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -55 °C to +150 °C  
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC  
board with recommended mounting pad (see page 2)  
.
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C  
if mounted on FR4 PC board as described for thermal resistance  
.
.
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01004 Rev C, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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与MXLPLAD15KP33AE3相关器件

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MXLPLAD15KP33CAE3 MICROSEMI

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MXLPLAD15KP33CAE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, ROH
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 		Trans Voltage Suppressor Diode, 15000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MXLPLAD15KP36AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, RO
MXLPLAD15KP36AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, RO
MXLPLAD15KP36ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, PL
MXLPLAD15KP36CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 36V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MXLPLAD15KP36CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 36V V(RWM), Bidirectional, 1 Element, Silicon, ROH

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