5秒后页面跳转
MXLP4KE8.2CATR PDF预览

MXLP4KE8.2CATR

更新时间: 2024-11-05 14:36:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 373K
描述
Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

MXLP4KE8.2CATR 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.25Is Samacsys:N
其他特性:HIGH RELIABILITY最大击穿电压:8.61 V
最小击穿电压:7.79 V击穿电压标称值:8.2 V
外壳连接:ISOLATED最大钳位电压:12.1 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:BIDIRECTIONAL最大功率耗散:2.5 W
认证状态:Not Qualified最大重复峰值反向电压:7.02 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

MXLP4KE8.2CATR 数据手册

 浏览型号MXLP4KE8.2CATR的Datasheet PDF文件第2页浏览型号MXLP4KE8.2CATR的Datasheet PDF文件第3页浏览型号MXLP4KE8.2CATR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Economical series for thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 5.8 to 342 V standoff voltages (VWM)  
- Fast response  
400W Transient Voltage Suppressor  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MP4KE6.8A thru MP4KE400CA, e3  
FEATURES  
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500  
Refer to MicroNote 129 for more details on the screening options.  
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
.
.
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
.
.
Suppresses transients up to 400 watts @ 10/1000 s (see Figure 1)  
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
DO-41 (DO-204AL)  
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MP4KE5.0A to MP4KE91CA  
Class 2: MP4KE5.0A to MP4KE47ACA  
Class 3: MP4KE5.0A to MP4KE24CA  
Class 4: MP4KE5.0A to MP4KE12CA  
.
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1: MP4KE5.0A to MP4KE30CA  
Class 2: MP4KE5.0A to MP4KE15CA  
MAXIMUM RATINGS  
.
.
Operating and Storage Temperature: -65 °C to +150 °C  
Peak Pulse Power: 400 Watts at 10/1000 s (see Figures 1, 2 and 3 for tW, waveform and  
derating effects) with impulse repetition rate (duty factor) of 0.01 % or less  
.
.
Thermal Resistance: 50 °C /W junction to leads @ 3/8 inch (10 mm) from body, or 110 C/W  
junction to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track  
width 1 mm, length 25 mm  
Steady-State Power: 2.5 Watts @ TL=25 C at 3/8 inch (10 mm) from body, or 1.13 W at TA =  
25 ºC on FR4 PC board described for thermal resistance  
.
.
Forward Voltage at 25 C: 3.5 V @ 30 A with 8.3 ms half-sine wave (unidirectional only  
Solder temperatures: 260 C for 10 s (maximum)  
RF01006 Rev A, June 2010  
High Reliability Product Group  
Page 1 of 4  

与MXLP4KE8.2CATR相关器件

型号 品牌 获取价格 描述 数据表
MXLP4KE8.2E3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode
MXLP4KE82 MICROSEMI

获取价格

Trans Voltage Suppressor Diode
MXLP4KE82A MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXLP4KE82ATR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXLP4KE82C MICROSEMI

获取价格

Trans Voltage Suppressor Diode
MXLP4KE82CA MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXLP4KE82CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXLP4KE82CATR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXLP4KE82CE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode
MXLP4KE82E3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode