Datasheet > MX5KP9.0CATR

MX5KP9.0CATR

更新时间： 2024-11-03 13:35:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管电视
页数	文件大小	规格书
4页	258K
描述
5000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR, PLASTIC, CASE 5A, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MX5KP9.0CATR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	DO-204
包装说明：	R-PALF-W2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.32
其他特性：	HIGH RELIABILITY	最大击穿电压：	11.1 V
最小击穿电压：	10 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-204AR
JESD-30 代码：	R-PALF-W2	JESD-609代码：	e0
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	5000 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	1.56 W
认证状态：	Not Qualified	参考标准：	MIL-19500
最大重复峰值反向电压：	9 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MX5KP9.0CATR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

5000W Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Plastic encapsulated TVS series for Thru Hole mounting

- Selections for 5.0 to 110 V standoff voltages (V_WM

)

LEVELS

M, MA, MX, MXL

DEVICES

M5KP5.0A thru M5KP110CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Suppresses transients up to 5000 watts @10/1000 µs and 34000 watts @ 8/20 µs (see Figure 1)

Optional upscreening available by replacing M prefix with MA, MX or MXL prefixes. These prefixes specify

various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129

for more details on the screening options.

Metal hermetically sealed DO-13 axial-leaded equivalents available in the LC6.5A - LC170A series in

separate data sheet

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

3σ lot norm screening performed on Standby Current I_D

CASE 5A

(DO-204AR)

APPLICATIONS / BENEFITS

Protection from switching transients and induced RF

Fast response

Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1,2,3,4: M5KP5.0A to M5KP110CA

Class 5: M5KP5.0A to M5KP110CA (short distance)

Class 5: M5KP5.0A to M5KP36CA (long distance)

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1 & 2: M5KP5.0A to M5KP110CA

Class 3: M5KP5.0A to M5KP78CA

Class 4: M5KP5.0A to M5KP40CA

Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:

Class 2: M5KP5.0A to M5KP70CA

Class 3: M5KP5.0 to M5KP36CA

Class 4: M5KP5.0 to M5KP18CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 5000 watts at 10/1000 μs (also see Figures 1 and 2) with impulse

repetition rate (duty factor) of 0.05 % or less

t_clamping(0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 ºC to +150 ºC

Thermal resistance: 20ºC/W junction to lead, or 80ºC/W junction to ambient when mounted on FR4 PC

board with 4 mm²copper pads (1oz) and track width 1 mm, length 25 mm

Steady-State Power dissipation: 6 watts at TL = 30 ºC, or 1.56 watts at TA = 25 ºC when mounted on FR4

PC board described for thermal resistance

Forward Surge Voltage: 3.5 V maximum @ 100 Amps 8.3 ms half-sine wave (unidirectional devices only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01010 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MX5KP9.0CATR相关器件

型号	品牌	获取价格	描述	数据表
MX5KP9.0CH	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Bidirectional,
MX5KP9.0CHE3/TR12	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Bidirectional,
MX5KP9.0E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional,
MX5KP9.0E3/TR8	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional,
MX5KP9.0E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MX5KP9.0H	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional,
MX5KP9.0H/TR8	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional,
MX5KP9.0HE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional,
MX5KP9.0TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MX5KP90	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与MX5KP9.0CATR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

28
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

27

产品中心

服务支持

精选活动

关于我们

帮助中心

MX5KP9.0CATR

MX5KP9.0CATR 技术参数

MX5KP9.0CATR 数据手册

与MX5KP9.0CATR相关器件

与MX5KP9.0CATR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX5KP9.0CATR

MX5KP9.0CATR 技术参数

MX5KP9.0CATR 数据手册

与MX5KP9.0CATR相关器件

与MX5KP9.0CATR相关文章

您还可以找

您在本页遇到什么问题？