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MX5KP7.5AE3 PDF预览

MX5KP7.5AE3

更新时间: 2024-11-03 19:08:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 354K
描述
Trans Voltage Suppressor Diode, 5000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, 5A, 2 PIN

MX5KP7.5AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-204
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.32
Is Samacsys:N最大击穿电压:9.21 V
最小击穿电压:8.33 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-204AR
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.56 W认证状态:Not Qualified
最大重复峰值反向电压:7.5 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MX5KP7.5AE3 数据手册

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MX5KP7.5AE3 替代型号

型号 品牌 替代类型 描述 数据表
MX5KP7.5A MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 5000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO

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