Datasheet > MX5KP6.5AE3/TR

MX5KP6.5AE3/TR

更新时间： 2024-11-04 06:14:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	236K
描述
Trans Voltage Suppressor Diode, 5000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MX5KP6.5AE3/TR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	O-PALF-W2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.36	Is Samacsys：	N
最大击穿电压：	7.98 V	最小击穿电压：	7.22 V
击穿电压标称值：	7.6 V	外壳连接：	ISOLATED
最大钳位电压：	11.2 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AR	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	5000 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	1.56 W	认证状态：	Not Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	6.5 V
子类别：	Transient Suppressors	表面贴装：	NO
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

MX5KP6.5AE3/TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

5000W Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Plastic encapsulated TVS series for Thru Hole mounting

- Selections for 5.0 to 110 V standoff voltages (V_WM

)

LEVELS

M, MA, MX, MXL

DEVICES

M5KP5.0A thru M5KP110CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Suppresses transients up to 5000 watts @10/1000 µs and 34000 watts @ 8/20 µs (see Figure 1)

Optional upscreening available by replacing M prefix with MA, MX or MXL prefixes. These prefixes specify

various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129

for more details on the screening options.

Metal hermetically sealed DO-13 axial-leaded equivalents available in the LC6.5A - LC170A series in

separate data sheet

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

3σ lot norm screening performed on Standby Current I_D

CASE 5A

(DO-204AR)

APPLICATIONS / BENEFITS

Protection from switching transients and induced RF

Fast response

Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1,2,3,4: M5KP5.0A to M5KP110CA

Class 5: M5KP5.0A to M5KP110CA (short distance)

Class 5: M5KP5.0A to M5KP36CA (long distance)

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1 & 2: M5KP5.0A to M5KP110CA

Class 3: M5KP5.0A to M5KP78CA

Class 4: M5KP5.0A to M5KP40CA

Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:

Class 2: M5KP5.0A to M5KP70CA

Class 3: M5KP5.0 to M5KP36CA

Class 4: M5KP5.0 to M5KP18CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 5000 watts at 10/1000 μs (also see Figures 1 and 2) with impulse

repetition rate (duty factor) of 0.05 % or less

t_clamping(0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 ºC to +150 ºC

Thermal resistance: 20ºC/W junction to lead, or 80ºC/W junction to ambient when mounted on FR4 PC

board with 4 mm²copper pads (1oz) and track width 1 mm, length 25 mm

Steady-State Power dissipation: 6 watts at TL = 30 ºC, or 1.56 watts at TA = 25 ºC when mounted on FR4

PC board described for thermal resistance

Forward Surge Voltage: 3.5 V maximum @ 100 Amps 8.3 ms half-sine wave (unidirectional devices only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01010 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MX5KP6.5AE3/TR相关器件

型号	品牌	获取价格	描述	数据表
MX5KP6.5AE3TR	MICROSEMI	获取价格	5000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 P
MX5KP6.5ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MX5KP6.5CA/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MX5KP6.5CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MX5KP6.5CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MX5KP6.5CAE3/TR8	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 6.5V V(RWM), Bidirectional,
MX5KP6.5CATR	MICROSEMI	获取价格	5000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR, PLASTIC, CASE 5A, 2 PIN
MX5KP6.5CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MX5KP6.5CE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 6.5V V(RWM), Bidirectional,
MX5KP6.5E3/TR12	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 6.5V V(RWM), Unidirectional,

与MX5KP6.5AE3/TR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

9
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

4
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

26
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

MX5KP6.5AE3/TR

MX5KP6.5AE3/TR 技术参数

MX5KP6.5AE3/TR 数据手册

与MX5KP6.5AE3/TR相关器件

与MX5KP6.5AE3/TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX5KP6.5AE3/TR

MX5KP6.5AE3/TR 技术参数

MX5KP6.5AE3/TR 数据手册

与MX5KP6.5AE3/TR相关器件

与MX5KP6.5AE3/TR相关文章

您还可以找

您在本页遇到什么问题？