Datasheet > MX5KP22CAE3/TR

MX5KP22CAE3/TR

更新时间： 2024-11-02 04:38:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	236K
描述
Trans Voltage Suppressor Diode, 5000W, 22V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MX5KP22CAE3/TR 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	O-PALF-W2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.45	最大击穿电压：	26.9 V
最小击穿电压：	24.4 V	击穿电压标称值：	25.65 V
外壳连接：	ISOLATED	最大钳位电压：	35.5 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-204AR
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	5000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
极性：	BIDIRECTIONAL	最大功率耗散：	1.56 W
认证状态：	Not Qualified	参考标准：	MIL-19500
最大重复峰值反向电压：	22 V	子类别：	Transient Suppressors
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL

MX5KP22CAE3/TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

5000W Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Plastic encapsulated TVS series for Thru Hole mounting

- Selections for 5.0 to 110 V standoff voltages (V_WM

)

LEVELS

M, MA, MX, MXL

DEVICES

M5KP5.0A thru M5KP110CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Suppresses transients up to 5000 watts @10/1000 µs and 34000 watts @ 8/20 µs (see Figure 1)

Optional upscreening available by replacing M prefix with MA, MX or MXL prefixes. These prefixes specify

various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129

for more details on the screening options.

Metal hermetically sealed DO-13 axial-leaded equivalents available in the LC6.5A - LC170A series in

separate data sheet

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

3σ lot norm screening performed on Standby Current I_D

CASE 5A

(DO-204AR)

APPLICATIONS / BENEFITS

Protection from switching transients and induced RF

Fast response

Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1,2,3,4: M5KP5.0A to M5KP110CA

Class 5: M5KP5.0A to M5KP110CA (short distance)

Class 5: M5KP5.0A to M5KP36CA (long distance)

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1 & 2: M5KP5.0A to M5KP110CA

Class 3: M5KP5.0A to M5KP78CA

Class 4: M5KP5.0A to M5KP40CA

Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:

Class 2: M5KP5.0A to M5KP70CA

Class 3: M5KP5.0 to M5KP36CA

Class 4: M5KP5.0 to M5KP18CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 5000 watts at 10/1000 μs (also see Figures 1 and 2) with impulse

repetition rate (duty factor) of 0.05 % or less

t_clamping(0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 ºC to +150 ºC

Thermal resistance: 20ºC/W junction to lead, or 80ºC/W junction to ambient when mounted on FR4 PC

board with 4 mm²copper pads (1oz) and track width 1 mm, length 25 mm

Steady-State Power dissipation: 6 watts at TL = 30 ºC, or 1.56 watts at TA = 25 ºC when mounted on FR4

PC board described for thermal resistance

Forward Surge Voltage: 3.5 V maximum @ 100 Amps 8.3 ms half-sine wave (unidirectional devices only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01010 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MX5KP22CAE3/TR相关器件

型号	品牌	获取价格	描述	数据表
MX5KP22CAE3TR	MICROSEMI	获取价格	5000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PI
MX5KP22CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 22V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MX5KP22CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 22V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MX5KP22HE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Unidirectional,
MX5KP22HE3/TR8	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Unidirectional,
MX5KP22TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MX5KP24A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MX5KP24A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MX5KP24AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MX5KP24AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与MX5KP22CAE3/TR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

MX5KP22CAE3/TR

MX5KP22CAE3/TR 技术参数

MX5KP22CAE3/TR 数据手册

与MX5KP22CAE3/TR相关器件

与MX5KP22CAE3/TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX5KP22CAE3/TR

MX5KP22CAE3/TR 技术参数

MX5KP22CAE3/TR 数据手册

与MX5KP22CAE3/TR相关器件

与MX5KP22CAE3/TR相关文章

您还可以找

您在本页遇到什么问题？