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MX5807AUS

更新时间： 2024-11-14 10:58:27
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 141K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, E PACKAGE-2

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MX5807AUS 数据手册

 浏览型号MX5807AUS的Datasheet PDF文件第2页浏览型号MX5807AUS的Datasheet PDF文件第3页 
5807AUS thru 5811AUS  
SURFACE MOUNT VOIDLESS-  
HERMETICALLY-SEALED ULTRA FAST  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” surface mount rectifier diode series is ideal for high-reliability  
applications where a failure cannot be tolerated. They serve as good alternates for the  
industry-recognized 1N5807US thru 1N5811US rectifiers with 6.0 Amp ratings and working  
peak reverse voltages from 50 to 150 volts. They are hermetically sealed with voidless-glass  
construction using an internal “Category I or III” metallurgical bonds. These devices are also  
available in axial-leaded package configurations (see separate data sheet for 5807A thru  
5811A). Microsemi also offers numerous other rectifier products to meet higher and lower  
current ratings with various recovery time speed requirements including standard, fast, and  
ultrafast device types in both through-hole and surface mount packages.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount packages similar to 1N5807 to 1N5811  
• Ultrafast recovery 6 Amp rectifiers series 50 to 150 V  
•
•
•
•
•
Voidless-hermetically-sealed glass package  
Extremely robust construction  
• Military and other high-reliability applications  
• Switching power supplies or other applications  
requiring extremely fast switching & low forward loss  
• High forward surge current capability  
• Low thermal resistance  
Triple-layer passivation  
Internal “Category I or III” metallurgical bonds  
Options for screening in accordance with MIL-PRF-19500 for  
JAN, JANTX, JANTXV, and JANS are available by adding  
MQ, MX, MV, or SP prefixes respectively to part numbers  
similar to the MIL-PRF-19500/477 process flow and testing  
only for those Electrical Characteristics listed below.  
• Controlled avalanche with peak reverse power  
capability  
• Inherently radiation hard as described in  
Microsemi MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Operating Temperature: -65oC to +175oC.  
Storage Temperature: -65oC to +175oC.  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
TERMINALS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish.  
Average Rectified Forward Current (IO): 6 Amps @ TEC  
75ºC End Cap temperature (see note 1)  
=
•
•
•
•
MARKING & POLARITY: Cathode band only  
Tape & Reel option: Standard per EIA-481-B  
Weight: 539 mg  
•
•
•
•
Thermal Resistance: 10 ºC/W junction to end cap  
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time  
Forward Surge Current (8.3 ms half sine) 125 Amps  
Capacitance: 70 pF  
See package dimensions and recommended pad  
layout on last page  
•
Solder temperature: 260ºC for 10 s (maximum)  
ELECTRICAL CHARACTERISTICS  
WORKING BREAKDOWN  
AVERAGE  
AVERAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
@ 4 A  
(8.3 ms pulse)  
VF  
REVERSE  
CURRENT  
(MAX)  
SURGE  
CURRENT  
(MAX)  
REVERSE  
RECOVERY  
TIME (MAX)  
(NOTE 4)  
PEAK  
REVERSE  
VOLTAGE  
VOLTAGE  
(MIN.)  
@ 100μA  
RECTIFIED RECTIFIED  
CURRENT  
CURRENT  
TYPE  
I
I
@ V  
I
FSM  
O1  
O2  
RWM  
V
t
rr  
IR  
(NOTE 3)  
AMPS  
V
@TA=55ºC  
(Note 2)  
AMPS  
RWM  
BR  
@T =75ºC  
EC  
(Note 1)  
AMPS  
VOLTS  
VOLTS  
VOLTS  
ns  
μA  
25oC  
125oC 25oC 125oC  
5807AUS  
5809AUS  
5811AUS  
50  
60  
6.0  
6.0  
6.0  
3.0  
3.0  
3.0  
0.925  
0.800  
0.800  
0.800  
5
5
5
575  
575  
575  
125  
125  
125  
40  
40  
40  
100  
150  
110  
160  
0.925  
0.925  
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC  
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC  
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals  
NOTE 4: I = 1.0 A, I  
= 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min  
RM  
F
Copyright © 2007  
3-22-2007 Rev D  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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