5秒后页面跳转
捷配首页

Datasheet > MX30KPA58CAE3
MX30KPA58CAE3 PDF预览

MX30KPA58CAE3

更新时间： 2024-11-04 06:37:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 274K
描述
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

MX30KPA58CAE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.39
最小击穿电压：64.8 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：30000 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：1.61 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：58 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED

MX30KPA58CAE3 数据手册

 浏览型号MX30KPA58CAE3的Datasheet PDF文件第2页浏览型号MX30KPA58CAE3的Datasheet PDF文件第3页浏览型号MX30KPA58CAE3的Datasheet PDF文件第4页 
30KPA28A thru 30KPA288CA, e3  
30kW Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
FOR  
DESCRIPTION  
APPEARANCE  
These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are  
designed for applications requiring protection of voltage-sensitive electronic  
devices that may be damaged by harsh or severe voltage transients  
including lightning per IEC61000-4-5 and class levels with various source  
impedances described herein. This series is available in 33 to 400 volt  
standoff voltages (VWM) in both unidirectional and bi-directional with either  
5% or 10% tolerances of the Breakdown Voltage (VBR). Microsemi also  
offers numerous other TVS products to meet higher or lower power  
demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES @ 250C UNLESS OTHER WISE SPECIFIED  
APPLICATIONS / BENEFITS  
•
•
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with a CA suffix)  
•
•
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and  
IEC 61000-4-4  
Suppresses transients up to 30 kW @ 10/1000 µs and  
200 kW @ 8/20 µs (see Figure 1)  
•
Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Class 1,2,3,4: 30KPA33A - 30KPA400A or CA  
Class 5: 30KPA33A - 30KPA400A or CA  
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
•
•
Glass passivated chip junction in a P600 package  
Reverse leakage below 2 µA for voltages above 73  
volts VBR  
Class 5: 30KPA33A - 30KPA220A or CA (long  
distance)  
• Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for  
added 100% temperature cycle -55oC to +125oC (10X)  
as well as surge (3X) and 24 hours HTRB with post  
test VZ & IR (in the operating direction for unidirectional  
or both directions for bidirectional)  
•
•
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
Class 1,2, 3: 30KPA33A to 30KPA400A or CA  
Class 4: 30KPA33A to 30KPA220A or CA  
Secondary lightning protection per IEC61000-4-5 with  
2 Ohms source impedance:  
• Options for screening in accordance with MIL-PRF-  
19500 for JANTX are available by adding MX prefix to  
the part number.  
Class 2: 30KPA33A to 30KPA400A or CA  
Class 3: 30KPA33A to 30KPA220A or CA  
Class 4: 30KPA33A to 30KPA110A or CA  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 30,000 watts  
•
•
CASE: Void-free transfer molded thermosetting  
epoxy P600 package meeting UL94V-0  
at 10/1000 μs (also see Figures 1 and 2)  
•
•
Impulse repetition rate (duty factor): 0.05%  
FINISH: Tin-Lead or RoHS compliant annealed  
matte-Tin plating readily solderable per MIL-STD-  
750, method 2026  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating & Storage temperature: -65ºC to +150ºC  
•
MARKING:  
•
•
Thermal resistance: 17.5ºC/W junction to lead, or  
77.5ºC/W junction to ambient when mounted on FR4  
PC board with 4 mm2 copper pads (1oz) and track  
width 1 mm, length 25 mm  
¾
¾
¾
¾
Polarity band when required  
MSC Microsemi  
Part Number 30KPAXX  
WW/YY Date code  
•
Steady-State Power dissipation: 7 watts at TL =  
27.5oC, or 1.61 watts at TA = 25ºC when mounted on  
FR4 PC board described for thermal resistance  
•
POLARITY: Band denotes cathode. Bidirectional not  
marked for polarity  
•
•
WEIGHT: 0.07oz or 2.5grams (approximate)  
•
•
Forward Surge: 400 Amps 8.3 ms half-sine wave for  
unidirectional devices only  
Solder temperatures: 260 ºC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296 for axial  
package (add “TR” suffix to part number)  
•
See package dimension on last page  
Copyright © 2009  
09-01-2009 REV A, SD89A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

下载PDF

与MX30KPA58CAE3相关器件

型号 品牌 获取价格 描述 数据表
MX30KPA58CATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MX30KPA60A MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, PL
MX30KPA60AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, RO
MX30KPA60CAE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MX30KPA64AE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 64V V(RWM), Unidirectional, 1 Element, Silicon, RO
MX30KPA64CAE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 64V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MX30KPA64CAE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 64V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MX30KPA64CATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 64V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MX30KPA66AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 66V V(RWM), Unidirectional, 1 Element, Silicon, RO
MX30KPA66ATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 66V V(RWM), Unidirectional, 1 Element, Silicon, PL

与MX30KPA58CAE3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证