Datasheet > MX30KPA30CAE3TR

MX30KPA30CAE3TR

更新时间： 2024-11-03 20:49:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	138K
描述
Trans Voltage Suppressor Diode, 30000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MX30KPA30CAE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.37
最小击穿电压：	33.51 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	30000 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	极性：	BIDIRECTIONAL
最大功率耗散：	1.61 W	认证状态：	Not Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	30 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

MX30KPA30CAE3TR 数据手册

30KPA28A thru 30KPA288CA, e3

30kW Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

FOR

DESCRIPTION

APPEARANCE

These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are

designed for applications requiring protection of voltage-sensitive electronic

devices that may be damaged by harsh or severe voltage transients

including lightning per IEC61000-4-5 and class levels with various source

impedances described herein. This series is available in 33 to 400 volt

standoff voltages (V_WM) in both unidirectional and bi-directional with either

5% or 10% tolerances of the Breakdown Voltage (V_BR). Microsemi also

offers numerous other TVS products to meet higher or lower power

demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES @ 25⁰C UNLESS OTHER WISE SPECIFIED

APPLICATIONS / BENEFITS

•

Available in both Unidirectional and Bidirectional

construction (Bidirectional with a CA suffix)

•

Protection from switching transients and induced RF

Protection from ESD, and EFT per IEC 61000-4-2 and

IEC 61000-4-4

Suppresses transients up to 30 kW @ 10/1000 µs and

200 kW @ 8/20 µs (see Figure 1)

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1,2,3,4: 30KPA33A - 30KPA400A or CA

Class 5: 30KPA33A - 30KPA400A or CA

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

•

Glass passivated chip junction in a P600 package

Reverse leakage below 2 µA for voltages above 73

volts V_BR

Class 5: 30KPA33A - 30KPA220A or CA (long

distance)

• Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC (10X)

as well as surge (3X) and 24 hours HTRB with post

test V_Z& I_R(in the operating direction for unidirectional

or both directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1,2, 3: 30KPA33A to 30KPA400A or CA

Class 4: 30KPA33A to 30KPA220A or CA

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

• Options for screening in accordance with MIL-PRF-

19500 for JANTX are available by adding MX prefix to

the part number.

Class 2: 30KPA33A to 30KPA400A or CA

Class 3: 30KPA33A to 30KPA220A or CA

Class 4: 30KPA33A to 30KPA110A or CA

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 30,000 watts

•

CASE: Void-free transfer molded thermosetting

epoxy P600 package meeting UL94V-0

at 10/1000 μs (also see Figures 1 and 2)

•

Impulse repetition rate (duty factor): 0.05%

FINISH: Tin-Lead or RoHS compliant annealed

matte-Tin plating readily solderable per MIL-STD-

750, method 2026

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Operating & Storage temperature: -65^ºC to +150^ºC

•

MARKING:

•

Thermal resistance: 17.5^ºC/W junction to lead, or

77.5^ºC/W junction to ambient when mounted on FR4

PC board with 4 mm²copper pads (1oz) and track

width 1 mm, length 25 mm

Polarity band when required

MSC Microsemi

Part Number 30KPAXX

WW/YY Date code

•

Steady-State Power dissipation: 7 watts at T_L=

27.5^oC, or 1.61 watts at T_A= 25^ºC when mounted on

FR4 PC board described for thermal resistance

•

POLARITY: Band denotes cathode. Bidirectional not

marked for polarity

•

WEIGHT: 0.07oz or 2.5grams (approximate)

•

Forward Surge: 400 Amps 8.3 ms half-sine wave for

unidirectional devices only

Solder temperatures: 260 ^ºC for 10 s (maximum)

TAPE & REEL option: Standard per EIA-296 for axial

package (add “TR” suffix to part number)

•

See package dimension on last page

09-01-2009 REV A, SD89A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与MX30KPA30CAE3TR相关器件

型号	品牌	获取价格	描述	数据表
MX30KPA30CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MX30KPA33AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, RO
MX30KPA33AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, RO
MX30KPA33ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, PL
MX30KPA33CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MX30KPA33CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MX30KPA33CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MX30KPA33CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MX30KPA36A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, PL
MX30KPA36AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, RO

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