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MX30KP130CA PDF预览

MX30KP130CA

更新时间: 2024-11-01 20:05:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 1559K
描述
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

MX30KP130CA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
最大击穿电压:159 V最小击穿电压:144 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:30000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.61 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:130 V表面贴装:NO
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MX30KP130CA 数据手册

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