MX29LV161T/B
16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE
3VONLYFLASHMEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 2,097,152 x 8/1,048,576 x 16 switchable
• Singlepowersupplyoperation
-Datapolling&Togglebitfordetectionofprogramand
eraseoperationcompletion.
• Ready/Busy pin (RY/BY)
- 3.0V only operation for read, erase and program
operation
-Providesahardwaremethodofdetectingprogramor
eraseoperationcompletion.
• Fast access time: 70/90ns
• Sectorprotection
• Lowpowerconsumption
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
- 20mA maximum active current
- 0.2uA typical standby current
• Commandregisterarchitecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability.
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
- Automatically program and verify data at specified
address
- 44-pin SOP
• Erasesuspend/EraseResume
- 48-pin TSOP
- Suspends sector erase operation to read data from,
orprogramdatato,any sectorthatisnotbeingerased,
then resumes the erase.
- 48 Ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• Status Reply
GENERAL DESCRIPTION
The MX29LV161T/B is a 16-mega bit Flash memory or-
ganized as 2M bytes of 8 bits or 1M words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV161T/B is packaged in 44-pin
SOP, 48-pin TSOP, and 48CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV161T/B uses a 2.7V~3.6VVCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The standard MX29LV161T/B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV161T/B has separate chip enable (CE) and
output enable (OE) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV161T/B uses a command register to manage
this functionality. The command register allows for 100%
P/N:PM0855
REV. 1.0, SEP. 24, 2001
1