MX29LV065B
64M-BIT[8Mx8]CMOSEQUALSECTORFLASHMEMORY
FEATURES
• Minimum 100,000 erase/program cycle
• 20-year data retention
GENERAL FEATURES
• 8,388,608 x 8 byte structure
• One hundred twenty-eight Equal Sectors with 64K byte
each
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
- Any combination of sectors can be erased with erase
suspend/resume function
• Sector Protection/Chip Unprotected
- Provides sector group protect function to prevent pro
gram or erase operation in the protected sector group
- Provides chip unprotected function to allow code
changing
• Status Reply
- Data# Polling & Toggle bits provide detection of pro-
gram and erase operation completion
- Provides temporary sector group unprotected func-
tion for code changing in previously protected sector
groups
• Secured Silicon Sector
- Provides a 128-byte area for code or data that can
be permanently protected.
HARDWARE FEATURES
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
• Single Power Supply Operation
- 3.0 to 3.6 volt for read, erase, and program opera-
tions
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 2.5V
• Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
• Ready/Busy# (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal state
machine to read mode
• ACC pin
- Accelerates programming time for higher throughput
during system production
PERFORMANCE
• High Performance
- Fast access time: 90/120ns
PACKAGE
• 48-pinTSOP
• 63-ball CSP
- Fast program time: 7us, 42s/chip (typical)
- Fast erase time: 0.9s/sector, 45s/chip (typical)
• Low Power Consumption
- Low active read current: 9mA (typical) at 5MHz
- Low standby current: 0.2uA(typ.)
GENERAL DESCRIPTION
The standard MX29LV065B offers access time as fast
as 90ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV065B has separate chip enable (CE#) and
output enable (OE#) controls.
The MX29LV065B is a 64-mega bit Flash memory orga-
nized as 8M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV065B is
packaged in 48-pinTSOP and 63-ball CSP. It is designed
to be reprogrammed and erased in system or in standard
EPROM programmers.
MXIC's Flash memories augment EPROM functionality
P/N:PM1082
REV. 1.0, MAR. 08, 2005
1