MX29F400C T/B
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE
5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 switchable
• Singlepowersupplyoperation
• Ready/Busy pin (RY/BY#)
-Providesahardwaremethodofdetectingprogramor
- 5.0V only operation for read, erase and program
operation
• Fast access time: 55/70/90ns
erase cycle completion
• Sector protect/chip unprotect for 5V only system
• Sectorprotection
• CompatiblewithMX29F400T/Bdevice
• Lowpowerconsumption
- Hardware method to disable any combination of
sectors from program or erase operations
-Temporarysectorunprotectallowscodechangesin
previously locked sectors
- 40mA maximum active current(5MHz)
- 1uA typical standby current
• Commandregisterarchitecture
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1, 8K-
Bytex2, 32K-Bytex1, and 64K-Byte x7)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability.
- Automatically program and verify data at specified
address
- 44-pin SOP
- 48-pin TSOP
• Erasesuspend/EraseResume
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
- Suspends an erase operation to read data from, or
program data to, another sector that is not being
erased, then resumes the erase
• Status Reply
• 20 years data retention
- Data# Polling & Toggle bit for detection of program
and erase cycle completion
GENERAL DESCRIPTION
The MX29F400C T/B is a 4-mega bit Flash memory or-
ganized as 512K bytes of 8 bits or 256K words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29F400CT/B is packaged in 44-pin SOP, 48-pin
TSOP. It is designed to be reprogrammed and erased in
system or in standard EPROM programmers.
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29F400CT/B uses a 5.0V±10%VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The standard MX29F400C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29F400CT/B has separate chip enable (CE#)
and output enable (OE#) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F400C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
P/N:PM1200
REV. 1.0, DEC. 20, 2005
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