是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | FLANGE MOUNT, R-CDFM-F2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.11 | Is Samacsys: | N |
其他特性: | DIFFUSED EMITTER BALLASTING RESISTORS | 外壳连接: | BASE |
最大集电极电流 (IC): | 21 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最高频带: | L BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 960 W |
最小功率增益 (Gp): | 7 dB | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MX0912B351Y,114 | NXP |
功能相似 |
MX0912B351Y |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MX0912B351Y,114 | NXP |
获取价格 |
MX0912B351Y | |
MX0912B351Y114 | NXP |
获取价格 |
NPN microwave power transistor | |
MX0912B351YTRAY | NXP |
获取价格 |
TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | |
MX1 | ETC |
获取价格 |
||
MX1 Series | MERITEK |
获取价格 |
MX1 Series | Ceramic SMD Crystal Unit 1.6 x 1.2mm MHZ Crystal | |
MX1.5KE100A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, C | |
MX1.5KE100AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, R | |
MX1.5KE100AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, R | |
MX1.5KE100AE3TR | MICROSEMI |
获取价格 |
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN | |
MX1.5KE100ATR | MICROSEMI |
获取价格 |
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, CASE 1, 2 PIN |