Datasheet > MVUPTB5

MVUPTB5

更新时间： 2024-10-30 04:51:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	186K
描述
Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216AA, PLASTIC, POWERMITE-2

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MVUPTB5 数据手册

UPT5Re3 – UPT48Re3

UPTB5e3 – UPTB48e3

SURFACE MOUNT TRANSIENT

VOLTAGE SUPPRESSORS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

Microsemi’s new Powermite UPT series transient voltage suppressors

feature oxide-passivated chips, with high-temperature solder bonds for high

surge capability, and negligible electrical degradation under repeated surge

conditions. Both unidirectional and bidirectional configurations are available.

In addition to its size advantages, Powermite package includes a full

metallic bottom (cathode) that eliminates the possibility of solder flux

entrapment at assembly and a unique locking tab serving as an integral heat

sink.

DO-216AA

Innovative design makes this device fully compatible for use with automatic

insertion equipment.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Powermite Package with standoff voltages 5 to 48 V

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Both unidirectional and Bidirectional Versions

Available as “UPTR” and “UPTB” respectively

Protection from switching transients & induced

•

Peak Pulse Power 1000 W for 8/20 µs pulse

Clamping Time in pico-seconds

New improved lower leakage current for the

UPT5R & UPT5B

Integral heat sink / locking tabs

Compliant to IEC61000-4-2 and IEC61000-4-4

for ESD and EFT protection respectively

Full metallic bottom eliminates flux entrapment

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, or JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers, e.g. MXUPT15Re3,

MVUPTB28e3, MSPUPT10Re3, etc.

Class 1: UPTR/UPTB5 to 17

Class 2: UPTR/UPTB5 to 12

•

RoHS Compliant with e3 suffix part number

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy compound meeting UL94V-0

FINISH: Annealed matte-Tin plating over copper

and readily solderable per MIL-STD-750, method

2026

POLARITY: Cathode to case (bottom TAB 1)

MARKING: The last three digits of part number,

e.g. UPT5R is T05▪, UPT12R is T12▪, UPT24 is

T24▪, UPTB5 is TB05▪, UPTB12 is B12▪, UPTB24

is B24▪, etc. Please note dot suffix (for e3 suffix)

WEIGHT: 0.016 gram (approximate)

•

Operating and Storage Temperature: –65ºC to

+150ºC

Peak Pulse Power at 8/20 µs (See Figure 1 and 2)

UPT5R & UPT5B:

600 Watts

UPT8R thru UPT48R: 1000 Watts

UPTB8 thru UPTB48: 1000 Watts

•

Peak Pulse Power at 10/1000 µs (See Figure 2).

UPT5R & UPT5B:

100 Watts

UPT8R thru UPT48R: 150 Watts

UPTB8 thru UPTB48: 150 Watts

•

See package dimension on last page

•

Impulse Repetition Rate (duty factor): 0.01%

Tape & Reel option: Standard per EIA-481-B

using 12 mm tape with 3,000 per 7 inch reel or

12,000 per 13 inch reel (add TR7 or TR13 suffix to

part number)

Thermal resistance: 15ºC/W junction to base tab or

240ºC/W junction to ambient when mounted on FR4

PC board with 1 oz copper

•

Steady-State Power: 2.5 Watts (base tab ≤112ºC)

Solder Temperatures: 260ºC for 10 s (maximum)

2-13-2006 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与MVUPTB5相关器件

型号	品牌	获取价格	描述	数据表
MVUPTB5E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB5E3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB5TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB5TR13E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB5TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB5TR7E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB8E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB8E3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB8TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-216
MVUPTB8TR13E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-216

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