Datasheet > MVSMCG6039AE3

MVSMCG6039AE3

更新时间： 2024-10-17 08:10:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	393K
描述
Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AB, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MVSMCG6039AE3 数据手册

SMCG6036 thru SMCG6072A

and SMCJ6036 thru SMCJ6072A

Bidirectional Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These surface mount Transient Voltage Suppressors (TVSs) are used for protecting

sensitive components requiring low clamping voltage levels. They are rated at high

current impulses typically generated by inductive switching transients. Other benefits

are achieved with low-profile surface mount J-bend or Gull-wing terminals for stress-

relief and lower weight. Its low-flat profile provides easier insertion or automatic

handling benefits compared to other MELF style packages. Options for screening

similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX, MV or MSP

prefixes respectively for part numbers and high reliability screening in accordance

with MIL-PRF-19500/507.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Working Standoff Voltages: 5.5 volts to 185 volts

Metallurgically bonded

Reliability data per JESD22-A108, JESD22-A104,

JESD22-A113-B, JESD22-A101-B, and JESD22-A102

Thermally efficient surface mount with J-bends or

Gull wings termination for stress relief (flat handling

surface and easier placement)

Options for screening in accordance with MIL-PRF-

19500/507 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes to

part numbers respectively. For example, designate a

MXSMCJ6036A for a JANTX screen.

•

For high reliability transient voltage suppression in

low profile surface mount locations requiring easy

placement and strain relief

Light weight for airborne or satellite applications

•

• Superior surge quality to protect from ESD and EFT

transients per IEC61000-4-2 and -4-4

•

Lightning surge protection per IEC61000-4-5 for Class

1 and 2 with source impedance of 42 Ohms as well as

Class 3 and 4 selectively at lower voltages (V_WM) and

higher surge current (I_PP) ratings herein

•

Protects sensitive components such as ICs, CMOS,

Bipolar, BiCMOS, ECL, DTL, T²L, etc.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating temperature: -55°C to +150°C

• Molded epoxy package meets UL94V-0

• Terminals: solderable per MIL-STD-750

Method 2026. (max 260 °C for 10 sec.)

• Body marked with P/N without SMCJ or SMCG letters

(ie. 6036A, 6039, 6053, 6072A, etc.)

Storage temperature: -55°C to +150°C

1500 Watts of Peak Pulse Power at 10/1000 µs as

shown in Figure 3 (see Figure 1 for other t_Pvalues)

Thermal resistance, R_θJL= 20°C/W

Impulse repetition rate (duty factor): 0.01%

5.0 Watt steady-state maximum power at T_L=25°C

t_clamping(0V to V_(BR)min): less than 5 ns

•

• No polarity band is shown on these bi-directional types

• Weight: 0.25 grams (approximate)

• Tape & Reel packaging per EIA-481

(2500 units/reel)

ELECTRICAL CHARACTERISTICS @ 25^oC (Test Both Polarities)

Maximum

Rated

Stand-off

Voltage

(Note 1)

V_WM

Volts

5.5

Clamping

Voltage

@ I_PP

(10/1000 µs)

V_C

Maximum

Standby

Current

@ V_WM

I_D

Maximum

Peak Pulse

Current

(Fig. 2)

I_PP

Maximum

Temperature

Coefficient

of V_(BR)

α_V(BR)

%/^oC

MICROSEMI

Part Number

MICROSEMI

Part Number

Breakdown

Voltage*

Modified

“G”

Modified

“J”

V_(BR)

I_(BR)

Bend Lead

SMCG6036

SMCG6036A

SMCG6037

SMCG6037A

SMCG6038

SMCG6038A

SMCG6039

SMCG6039A

SMCG6040

SMCG6040A

SMCG6041

SMCG6041A

Bend Lead

SMCJ6036

SMCJ6036A

SMCJ6037

SMCJ6037A

SMCJ6038

SMCJ6038A

SMCJ6039

SMCJ6039A

SMCJ6040

SMCJ6040A

SMCJ6041

SMCJ6041A

Volts

11.7

µA

6.75 - 8.25

7.13 - 7.88

7.38 - 9.02

7.79 - 8.61

8.19 - 10.00

8.65 - 9.55

1000

500

128

.061

6.0

11.3

132

.061

6.5

12.5

120

.065

7.0

12.1

500

124

.065

7.0

13.8

200

109

.068

7.5

13.4

200

112

.068

8.0

9.0

9.5

9.9

11.0

10.5

12.1

15.0

100

.073

8.5

14.5

103

.073

8.5

16.2

.075

9.0

10.5 - 11.6

10.8 - 13.2

11.4 - 12.6

15.6

.075

9.0

17.3

.078

10.0

16.7

.078

Microsemi

Page 1

01-24-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与MVSMCG6039AE3相关器件

型号	品牌	获取价格	描述	数据表
MVSMCG6039E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6040AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6040E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MVSMCG6041	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6041AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MVSMCG6041E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6042	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MVSMCG6042AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MVSMCG6042E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MVSMCG6043	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

与MVSMCG6039AE3相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

7
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

14
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

20
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

18

产品中心

服务支持

精选活动

关于我们

帮助中心

MVSMCG6039AE3

MVSMCG6039AE3 数据手册

与MVSMCG6039AE3相关器件

与MVSMCG6039AE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MVSMCG6039AE3

MVSMCG6039AE3 数据手册

与MVSMCG6039AE3相关器件

与MVSMCG6039AE3相关文章

您还可以找

您在本页遇到什么问题？