Datasheet > MVSMCG5908

MVSMCG5908

更新时间： 2024-10-16 21:20:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
2页	113K
描述
Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MVSMCG5908 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-215AB	包装说明：	R-PDSO-G2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.92	其他特性：	HIGH RELIABILITY
最小击穿电压：	6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-215AB	JESD-30 代码：	R-PDSO-G2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
参考标准：	MIL-19500/500	最大重复峰值反向电压：	5 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MVSMCG5908 数据手册

SMCJ5908/SMCG5908

Unidirectional Surface Mount

Transient Voltage Suppressor^TM

S C O T T S D A L E D I V I S I O N

DESCRIPTION

SURFACE MOUNT

PACKAGE

These surface mount Transient Voltage Suppressors (TVSs) are used for

protecting sensitive components requiring low clamping voltage levels.

They are rated at high current impulses typically generated by inductive

switching transients. Other benefits are achieved with low profile surface

mount J-bend or Gull-wing terminals for stress-relief and lower weight. Its

low-flat profile provides easier insertion or automatic handling benefits

compared to other MELF style packages. Options for screening similar to

JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX, MV or MSP

prefixes respectively for part numbers and high reliability screening in

accordance with MIL-PRF-19500/500.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

Low inductance

Reliability data per JESD22-A108, JESD22-

A104, JESD22-A113-B, JESD22-A101-B, &

JESD22-A102

APPLICATIONS / BENEFITS

•

5.0 volts reverse stand-off voltage

Low clamping voltage

Lightning surge protection per IEC61000-4-5

for Class 1, 2, 3 and 4 with source impedance

of 42 Ohms

•

Thermally efficient surface mount with J-bends

for stress relief

•

Protects sensitive components such as ICs,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Flat handling surface for easy placement

Options for screening in accordance with MIL-

PRF-19500/500 for JAN, JANTX, JANTXV, and

JANS are available by adding MQ, MX, MV, or

MSP prefixes to part number respectively. For

example, designate a MXSMAJ5908 for a

JANTX screen.

Light-weight surface mount for airborne or

satellite applications

•

Easy pick-and-place insertion

Choice in J-bend or Gull wing terminations by

selecting J or G respectively in part number

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts of Peak Pulse Power dissipation at

25^oC (see derating curve)

•

CASE: Standard DO-214AB or DO-215AB

Molded epoxy package meets UL94V-0

•

t_clamping(0 volts to V_(BR)min): Less than 50 ps

(theoretical)

Finish: Terminals solderable per MIL-STD-

750, Method 2026. (max 260 °C for 10 sec.)

•

Operating and Storage temp: -65^oC to +150^oC

Forward surge rating: 200amps, 8.3 ms at 25^oC

5 watts steady-state power at T_L= 25^oC

Repetition rate (duty cycle): .05%

•

Polarity indicated by cathode band

WEIGHT: 0.235 grams (approximate)

Tape and Reel packaging per EIA-481

Body marked 5908 without SMCJ or SMCG

ELECTRICAL CHARACTERISTICS @ 25^oC

PEAK

MAXIMUM

REVERSE

LEAKAGE

I_D@ V_WM

REVERSE

STAND-OFF BREAKDOWN

VOLTAGE

MINIMUM

MAXIMUM

CLAMPING

VOLTAGE

@ I_PP1

(FIG. 3)

V_C

PEAK

PULSE

MAXIMUM

CLAMPING

PEAK

PULSE

MAXIMUM PULSE

CLAMPING CURRE

VOLTAGE

@ 1 mA

CURRENT VOLTAGE CURRENT VOLTAGE

@ I_PP2

(FIG. 3)

V_C

@ I_PP3

(FIG. 3)

V_C

(NOTE 1)

V_WM

(FIG. 3)

I_PP1

(FIG. 3)

I_PP2

(FIG. 3)

I_PP3

I_D

TYPE

V_(BR)

NUMBER

VOLTS

µA

VOLTS

8.5

120

SMCJ5908

SMCG5908

5.0

6.0

300

7.6

8.0

01-24-2003 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

下载PDF

与MVSMCG5908相关器件

型号	品牌	获取价格	描述	数据表
MVSMCG6.0AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVSMCG6.0AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVSMCG6.0ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVSMCG6.0C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6.0CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6.0CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6.0CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6.0CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6.0CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MVSMCG6.0CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

与MVSMCG5908相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

6
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

12
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

20
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

18

产品中心

服务支持

精选活动

关于我们

帮助中心

MVSMCG5908

MVSMCG5908 技术参数

MVSMCG5908 数据手册

与MVSMCG5908相关器件

与MVSMCG5908相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MVSMCG5908

MVSMCG5908 技术参数

MVSMCG5908 数据手册

与MVSMCG5908相关器件

与MVSMCG5908相关文章

您还可以找

您在本页遇到什么问题？