Datasheet > MVSMBG2K3.0TR

MVSMBG2K3.0TR

更新时间： 2024-11-01 10:02:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
3页	168K
描述
Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN

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技术参数
数据手册

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MVSMBG2K3.0TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-215AA	包装说明：	PLASTIC, SMBG, 2 PIN
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.88	最小击穿电压：	4.3 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-215AA
JESD-30 代码：	R-PDSO-G2	JESD-609代码：	e0
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	300 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.38 W
认证状态：	Not Qualified	最大重复峰值反向电压：	3 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MVSMBG2K3.0TR 数据手册

SMBJ2K3.0 thru SMBJ2K5.0, e3

SMBG2K3.0 thru SMBG2K5.0, e3

UNIDIRECTIONAL LOW VOLTAGE

SURFACE MOUNT TRANSIENT

VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The SMBJ2K3.0-5.0 or SMBG2K3.0-5.0 series of surface mount 2000 Watt

unidirectional Transient Voltage Suppressors (TVSs) provide low voltage

transient protection in a Working Standoff Voltage (V_WM) selections from 3.0

to 5.0 volts. Response time of clamping action is virtually instantaneous and

may also be used for protection from ESD or EFT per IEC61000-4-2 and

IEC61000-4-4, or for inductive switching environments and induced RF.

They can also be used for protecting other sensitive components from

secondary lightning effects per IEC61000-4-5 and class levels defined

herein. Microsemi also offers numerous other TVS products to meet higher

and lower power demands and special applications. Also available in military

equivalent screening levels by adding a prefix identifier as further described

in the Features section. Microsemi also offers numerous other TVS products

to meet higher and lower power applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Suppresses transients up to 2000 watts @ 8/20 µs (see

Figure 1 and 2)

•

Selections for 3.0 to 5.0 V Working Peak Standoff

(V_WM) voltage

•

Fast response

Economical unidirectional TVS series in surface

mount with flat handling surface for accurate

placement

Optional 100% screening for avionics grade is available

by adding MA prefix to part number for added 100%

temperature cycle -55^oC to +125^oC (10X) as well as surge

(3X) and 24 hours HTRB with post test V_Z& I_R(in the

operating direction for unidirectional or both directions for

bidirectional)

•

Voltage and reverse (leakage) current lowest

available

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV are available by adding

MQ, MX, or MV prefixes respectively to part numbers.

•

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

Moisture classification is Level 1 with no dry pack required

per IPC/JEDEC J-STD-020B

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance for Class 1

•

RoHS Compliant devices available by adding “e3” suffix

Consult factory for bidirectional options

MAXIMUM RATINGS

• Peak Pulse Power dissipation at 25^oC: 2000 watts at 8/20

μs or 300 Watts at 10/1000 μs (also see Figure 1 and 4)

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Clamping Voltage at 10 Amps @ 8/20 μs shown on page 2

• Impulse repetition rate (duty factor): 0.01% maximum

• t_clamping(0 volts to V_(BR)min.): < 100 ps

•

FINISH: Tin-Lead or RoHS compliant annealed

matte-Tin plating over copper readily solderable

per MIL-STD-750, method 2026

MARKING: Body marked without SMBJ or SMBG

part number prefix, e.g. 2K3.0, 2K3.3, 2K4.0, etc.

• Operating and Storage temperature: -65^oC to +150^oC

• Thermal resistance: 25 ^ºC/W junction to lead, or 90^ºC/W

junction to ambient when mounted on FR4 PC board (1oz

Cu) with recommended footprint (see last page)

•

POLARITY: Band denotes cathode

WEIGHT: 0.1 grams (approximate)

• Steady-State Power dissipation: 5 watts at T_L= 25^oC, or

1.38 watts at T_A= 25^ºC when mounted on FR4 PC board

with recommended footprint

•

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape, 750 per 7 inch reel or 2500 per

13 inch reel (add “TR” suffix to part number)

• Forward Voltage at 25^oC: 3.5 Volts maximum @ 30 Amp

•

See package dimensions on last page

peak impulse of 8.3 ms half-sine wave (unidirectional only)

• Solder temperatures: 260^oC for 10 s (maximum)

6-21-2007 REV G

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与MVSMBG2K3.0TR相关器件

型号	品牌	获取价格	描述	数据表
MVSMBG2K4.0	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MVSMBG2K4.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MVSMBG2K4.0E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MVSMBG2K4.0TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MVSMBG2K4.5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MVSMBG2K4.5TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MVSMBG2K5.0	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MVSMBG2K5.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MVSMBG2K5.0E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MVSMBG2K5.0TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

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