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MVPLAD30KP10CE3 PDF预览

MVPLAD30KP10CE3

更新时间： 2024-11-13 13:22:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 276K
描述
Trans Voltage Suppressor Diode, 30000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

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MVPLAD30KP10CE3 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-1针数：1
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.79
Is Samacsys：N最大击穿电压：14.6 V
最小击穿电压：12.8 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：S-PSSO-G1JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：30000 W
元件数量：1端子数量：1
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：2.5 W
认证状态：Not Qualified最大重复峰值反向电压：10 V
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MVPLAD30KP10CE3 数据手册

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PLAD30KP10 thru PLAD30KP400CA, e3  
30kW Surface Mount Transient  
Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These Microsemi 30 kW Transient Voltage Suppressors (TVSs)  
are designed for applications requiring protection of voltage-  
sensitive electronic devices that may be damaged by harsh or  
severe voltage transients including lightning per IEC61000-4-5  
and class levels with various source impedances described  
herein. This series is available in 10 to 400 volt Standoff  
Voltages (VWM) in both unidirectional and bi-directional with either  
5% or 10% tolerances of the Breakdown Voltage (VBR).  
Microsemi also offers numerous other TVS products to meet  
higher or lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Protection from switching transients and induced RF  
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with C or CA suffix)  
Protection from ESD, and EFT per IEC 61000-4-2 and  
IEC 61000-4-4  
•
•
Selections for 10 to 400 volt Standoff Voltages VWM  
•
Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Suppresses transients up to 30 kW @ 10/1000 µs and 200  
kW @ 8/20 µs (see Figure 1)  
Class 1,2,3,4: PLAD30KP10 - PLAD30KP400A or CA  
•
•
Fast response  
Class 5: PLAD30KP10 - PLAD30KP400A or CA (short  
distance)  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X) as well as surge  
(3X) and 24 hours HTRB with post test VZ & IR (in the  
operating direction for unidirectional or both directions for  
bidirectional)  
Class 5: PLAD30KP10 - PLAD30KP220A or CA (long  
distance)  
•
•
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
Class 1,2, 3: PLAD30KP10 to PLAD30KP400A or CA  
Class 4: PLAD30KP10 to PLAD30KP220A or CA  
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding MQ,  
MX, or MV prefixes respectively to part numbers.  
Secondary lightning protection per IEC61000-4-5 with 2  
Ohms source impedance:  
Class 2: PLAD30KP10 to PLAD30KP400A or CA  
Class 3: PLAD30KP10 to PLAD30KP220A or CA  
Class 4: PLAD30KP10 to PLAD30KP110A or CA  
•
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
•
RoHS Compliant devices available by adding an “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 30,000 watts at  
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
10/1000 μs (also see Figures 1 and 2)  
•
•
Impulse repetition rate (duty factor): 0.05%  
FINISH: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating readily solderable per MIL-  
STD-750, method 2026  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating & Storage temperature: -65ºC to +150ºC  
Thermal resistance: 0.5ºC/W junction to case, or 50ºC/W  
junction to ambient when mounted on FR4 PC board with  
recommended mounting pad with 1 oz Cu (see last page)  
•
•
MARKING: Body marked with part number  
•
•
POLARITY: For unidirectional devices, the  
cathode is on the metal backside (package  
bottom)  
Steady-State Power dissipation: 250 watts at Tc = 25oC,  
or 2.5 watts at TA = 25ºC when mounted on FR4 PC  
board as described for thermal resistance above  
•
•
WEIGHT: 1.7-2.0 grams (approximate)  
•
TAPE & REEL option: Standard per EIA-296  
for axial package (add “TR” suffix to part  
number)  
•
•
Forward Surge: 1500 Amps (theoretical) at 8.3 ms half-  
sine wave for unidirectional devices only  
Solder temperatures: 260 ºC for 10 s (maximum)  
•
See package dimension on last page  
Copyright © 2007  
9-12-2007 Rev G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

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与MVPLAD30KP10CE3相关器件

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MVPLAD30KP10CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MVPLAD30KP10E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, RO
MVPLAD30KP10E3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, RO
MVPLAD30KP11 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, PL
MVPLAD30KP110 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, P
MVPLAD30KP110A MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, P
MVPLAD30KP110AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, R
MVPLAD30KP110AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, R
MVPLAD30KP110C MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, PL
MVPLAD30KP110CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, PL

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