是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | O-PALF-W2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.46 |
最大击穿电压: | 45.2 V | 最小击穿电压: | 40.9 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 5 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 36.8 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MVP6KE43CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 34.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MVP6KE43CTR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 34.8V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MVP6KE43E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 34.8V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MVP6KE43E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 34.8V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MVP6KE47 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 38.1V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MVP6KE47A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MVP6KE47AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MVP6KE47AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MVP6KE47ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MVP6KE47C | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 38.1V V(RWM), Bidirectional, 1 Element, Silicon, PLA |