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MV30KP130AE3

更新时间： 2024-11-01 19:32:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 156K
描述
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MV30KP130AE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.33
最大击穿电压：159 V最小击穿电压：144 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：30000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.61 W
认证状态：Not Qualified参考标准：MIL-19500
最大重复峰值反向电压：130 V表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MV30KP130AE3 数据手册

 浏览型号MV30KP130AE3的Datasheet PDF文件第2页浏览型号MV30KP130AE3的Datasheet PDF文件第3页 
30KP33 thru 30KP400CA, e3  
30kW Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are  
designed for applications requiring protection of voltage-sensitive electronic  
devices that may be damaged by harsh or severe voltage transients  
including lightning per IEC61000-4-5 and class levels with various source  
impedances described herein. This series is available in 33 to 400 volt  
standoff voltages (VWM) in both unidirectional and bi-directional with either  
5% or 10% tolerances of the Breakdown Voltage (VBR). Microsemi also  
offers numerous other TVS products to meet higher or lower power  
demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with C or CA suffix)  
•
•
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and  
IEC 61000-4-4  
•
•
Selections for 33 to 400 volt standoff voltages VWM  
Suppresses transients up to 30 kW @ 10/1000 µs and  
200 kW @ 8/20 µs (see Figure 1)  
•
Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Class 1,2,3,4: 30KP33A - 30KP400A or CA  
•
•
Fast response  
Class 5: 30KP33A - 30KP400A or CA (short distance)  
Class 5: 30KP33A - 30KP220A or CA (long distance)  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for  
added 100% temperature cycle -55oC to +125oC  
(10X) as well as surge (3X) and 24 hours HTRB with  
post test VZ & IR (in the operating direction for  
unidirectional or both directions for bidirectional)  
•
•
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
Class 1,2, 3: 30KP33A to 30KP400A or CA  
Class 4: 30KP33A to 30KP220A or CA  
•
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers.  
Secondary lightning protection per IEC61000-4-5 with  
2 Ohms source impedance:  
Class 2: 30KP33A to 30KP400A or CA  
Class 3: 30KP33 to 30KP220A or CA  
Class 4: 30KP33 to 30KP110A or CA  
•
•
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 30,000 watts  
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
at 10/1000 μs (also see Figures 1 and 2)  
•
•
Impulse repetition rate (duty factor): 0.05%  
FINISH: Tin-Lead or RoHS compliant annealed  
matte-Tin plating readily solderable per MIL-STD-  
750, method 2026  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating & Storage temperature: -65ºC to +150ºC  
Thermal resistance: 17.5ºC/W junction to lead, or  
77.5ºC/W junction to ambient when mounted on FR4  
PC board with 4 mm2 copper pads (1oz) and track  
width 1 mm, length 25 mm  
•
•
MARKING: Body marked with part number  
•
•
POLARITY: Band denotes cathode. Bidirectional not  
marked for polarity  
•
•
WEIGHT: 1.7 grams (approximate)  
TAPE & REEL option: Standard per EIA-296 for axial  
package (add “TR” suffix to part number)  
•
Steady-State Power dissipation: 7 watts at TL =  
27.5oC, or 1.61 watts at TA = 25ºC when mounted on  
FR4 PC board described for thermal resistance  
•
See package dimension on last page  
•
•
Forward Surge: 250 Amps 8.3 ms half-sine wave for  
unidirectional devices only  
Solder temperatures: 260 ºC for 10 s (maximum)  
Copyright © 2007  
8-21-2007 REV K  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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MV30KP130CE3 MICROSEMI

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MV30KP130E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, R
MV30KP130E3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, P
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