Datasheet > MURC860

MURC860

更新时间： 2024-11-02 04:13:59

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描述
MURC805-MURC860 Ultrafast Silicon Die

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MURC860 数据手册

SENSITRON

MURC805-MURC860

SEMICONDUCTOR

Data Sheet 4858, Rev.-

Technical Data

MURC805-MURC860

Ultrafast Silicon Die

Applications:

• Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Glass-Passivated

Epitaxial Construction.

Low Reverse Leakage Current

High Surge Current Capability

Low Forward Voltage Drop

Fast Reverse-Recovery Behavior

Maximum Ratings:

Characteristics

Symbol MURC MURC MURC MURC MURC MURC Unit

805

810

815

820

840

860

Peak Inverse Voltage

V_RWM

I_F(AV)

100

150

200

400

600

Average Rectified Forward

Current Total Device,(Rated V_R),

T_C= 150°C

Peak Repetitive Forward Current

(Rated V_R,Squre Wave,20KHz),

T_C= 150°C

Max. Peak One Cycle Non-

Repetitive Surge Current

8.3 ms, half Sine pulse

8.0

I_FM

I_FSM

100

Operating JunctionTemperature

and Storage Temperature

T_J,T_stg

-65 to +175

°C

Electrical Characteristics:

Characteristics

Symbol MURC MURC MURC MURC MURC MURC Unit

805

810

815

820

840

860

Max. Forward Voltage Drop(Note1)

(I_F= 8.0 Amp, T_J= 150 °C)

(I_F= 8.0 Amp, T_J= 25 °C)

V_F

0.895

0.975

1.00

1.30

1.20

1.50

Max. Reverse Current (Note1)

(Rated DC Voltage, T_J= 150 °C)

(Rated DC Voltage, T_J= 25 °C)

Max. Junction Capacitance

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz, V_SIG= 50mV (p-p)

Max Reverse Recovery Time

(I_F= 1.0 Amp, di/dt = 50 A/µs)

(I_F= 0.5 Amp, I_R= 1.0 A,

I_R

µA

250

5.0

500

C_T

t_rr

240

I_REC=0.25A)

1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%

• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •

• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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