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MUR440

更新时间： 2024-11-21 12:34:23
品牌 Logo 应用领域
星合电子 - GXELECTRONICS 二极管功效
页数 文件大小 规格书
2页 523K
描述
4.0 AMPS. Ultranfast Glass Passivated Rectifiers

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MUR440 数据手册

 浏览型号MUR440的Datasheet PDF文件第2页 
星合 子  
XINGHE ELECTRONICS  
MUR420 - MUR460  
4.0AMPS. UltrafastGlass Passivated Rectifiers  
DO-201AD  
Features  
ꢀ
Ideally suited for use in very high frequency  
switching power supplies, inverters and as free  
wheeling diodes  
ꢀ
ꢀ
ꢀ
Ultrafast recovery time for high efficiency  
Excellent high temperature switching  
Glass passivated junction  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Cases: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Pure tin plated, lead free, solderable per  
MIL-STD-202, Method 208 guaranteed  
Polarity: Color band denotes cathode  
High temperature soldering guaranteed:  
ꢀ
ꢀ
o
260 C/10 seconds/.375”,(9.5mm) lead lengths  
at 5 lbs.,(2.3kg) tension  
Mounting position: Any  
Weight: 1.2 grams, 0.045oz.  
Dimensions in inches and (millimeters)  
ꢀ
ꢀ
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Units  
Symbol  
VRRM  
VRMS  
VDC  
MUR420  
200  
MUR440  
400  
MUR460  
600  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
140  
280  
420  
Maximum DC Blocking Voltage  
200  
400  
600  
Maximum Average Forward Rectified Current  
.375”(9.5mm) Lead Length (See Fig. 1)  
4.0  
A
A
V
I(AV)  
IFSM  
VF  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated Load  
(JEDEC method )  
125  
70  
Maximum Instantaneous Forward Voltage  
@ 4.0A  
0.89  
1.28  
o
Maximum DC Reverse Current @ TC=25 C  
o
5.0  
10  
uA  
uA  
at Rated DC Blocking Voltage @ TC=125 C  
IR  
150  
250  
(Note 4)  
Maximum Reverse Recovery Time ( Note 2 )  
Typical Junction Capacitance ( Note 1 )  
Trr  
Cj  
25  
50  
nS  
pF  
65  
o
TJ = 25 C (Fig. 5)  
Maximum Forward Recovery Time TFR  
(IF=1.0A, di/dt = 100A/us, Rev. to 1.0V)  
TFR  
25  
50  
nS  
o
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Storage Temperature Range  
R
28  
-65 to +150  
C/W  
θJA  
o
TJ  
C
o
TSTG  
-65 to +150  
C
1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Notes:  
3. Thermal Resistance from Junction to Ambient, Lead Length = 1/2” on P.C. Board with  
1.5” x 1.5” Copper Surface.  
4. Pulse lest: tp = 300 uS, Duty Cycle < 2%.  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
QQ:464768017  
12

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