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MUR440

更新时间: 2024-02-03 12:47:33
品牌 Logo 应用领域
星合电子 - GXELECTRONICS 二极管功效
页数 文件大小 规格书
2页 523K
描述
4.0 AMPS. Ultranfast Glass Passivated Rectifiers

MUR440 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

MUR440 数据手册

 浏览型号MUR440的Datasheet PDF文件第2页 
星合 子  
XINGHE ELECTRONICS  
MUR420 - MUR460  
4.0AMPS. UltrafastGlass Passivated Rectifiers  
DO-201AD  
Features  
Ideally suited for use in very high frequency  
switching power supplies, inverters and as free  
wheeling diodes  
Ultrafast recovery time for high efficiency  
Excellent high temperature switching  
Glass passivated junction  
Mechanical Data  
Cases: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Pure tin plated, lead free, solderable per  
MIL-STD-202, Method 208 guaranteed  
Polarity: Color band denotes cathode  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.375”,(9.5mm) lead lengths  
at 5 lbs.,(2.3kg) tension  
Mounting position: Any  
Weight: 1.2 grams, 0.045oz.  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Units  
Symbol  
VRRM  
VRMS  
VDC  
MUR420  
200  
MUR440  
400  
MUR460  
600  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
140  
280  
420  
Maximum DC Blocking Voltage  
200  
400  
600  
Maximum Average Forward Rectified Current  
.375”(9.5mm) Lead Length (See Fig. 1)  
4.0  
A
A
V
I(AV)  
IFSM  
VF  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated Load  
(JEDEC method )  
125  
70  
Maximum Instantaneous Forward Voltage  
@ 4.0A  
0.89  
1.28  
o
Maximum DC Reverse Current @ TC=25 C  
o
5.0  
10  
uA  
uA  
at Rated DC Blocking Voltage @ TC=125 C  
IR  
150  
250  
(Note 4)  
Maximum Reverse Recovery Time ( Note 2 )  
Typical Junction Capacitance ( Note 1 )  
Trr  
Cj  
25  
50  
nS  
pF  
65  
o
TJ = 25 C (Fig. 5)  
Maximum Forward Recovery Time TFR  
(IF=1.0A, di/dt = 100A/us, Rev. to 1.0V)  
TFR  
25  
50  
nS  
o
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Storage Temperature Range  
R
28  
-65 to +150  
C/W  
θJA  
o
TJ  
C
o
TSTG  
-65 to +150  
C
1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Notes:  
3. Thermal Resistance from Junction to Ambient, Lead Length = 1/2” on P.C. Board with  
1.5” x 1.5” Copper Surface.  
4. Pulse lest: tp = 300 uS, Duty Cycle < 2%.  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
QQ:464768017  

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