MUR440-E3, MUR460-E3
Vishay General Semiconductor
www.vishay.com
Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-201AD
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
IF(AV)
4.0 A
VRRM
IFSM
400 V, 600 V
150 A
trr
50 ns
MECHANICAL DATA
VF at IF
1.05 V
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
TJ max.
Package
Diode variations
175 °C
DO-201AD
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MUR440 MUR460 UNIT
Maximum repetitive peak reverse voltage
VRRM
VRWM
VDC
400
400
400
600
600
600
Working peak reverse voltage
V
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Operating junction and storage temperature range
IF(AV)
4.0
A
IFSM
150
TJ, TSTG
-65 to +175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MUR440 MUR460 UNIT
TJ = 150 °C
1.05
3.0 A
4.0 A
(1)
Maximum instantaneous forward voltage
VF
1.25
1.28
10
V
TJ = 25 °C
TJ = 25 °C
Maximum instantaneous reverse current
(1)
IR
μA
ns
at rated DC blocking voltage
TJ = 150 °C
250
50
Max. reverse recovery time
IF = 0.5, IR = 1.0 A, Irr = 0.25 A
trr
Maximum reverse recovery time
Maximum forward recovery time
IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM
IF = 1.0 A, dI/dt = 100 A/μs, recovery to 1.0 V
trr
tfr
75
50
Note
(1)
Pulse test: tp = 300 μs, duty cycle 2 %
Revision: 19-Feb-16
Document Number: 88686
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000