Datasheet > MUR2X120A12

MUR2X120A12

更新时间： 2024-02-03 21:17:42

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	336K
描述
Electrically Isolated Base Plate

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中文翻译

获取价格

数据手册

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MUR2X120A12 数据手册

MUR2X100A10

V_RRM= 1000 V

I_F(AV)= 200 A

Super Fast Recovery Rectifier

Module Type 200 A

Features

• High Surge Capability

• Type 1000 V V_RRM

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

SOT-227 Package

Maximum ratings

Conditions

Parameter

Symbol

Value

Unit

V_RRM

V_DC

V_RMS

T_j

Maximum recurrent peak reverse voltage

Maximum DC blocking voltage

Maximum RMS Voltage

1000

700

Operating temperature

-55 to 175

°C

T_stg

Storage temperature

Electrical characteristics at 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

Parameter

Symbol

I_F(AV)

Value

200

Unit

Average forward current (per pkg)

I_FSM

8.3 ms, half sine

Peak forward surge current

(per leg)

1600

Maximum instantaneous forward voltage*

(per leg)

I_FM= 100 A, T_j= 25 °C

V_F

I_R

2.35

T_j= 25 °C

T_j= 150 °C

Maximum instantaneous reverse current at

rated DC blocking voltage (per leg)

µA

V_iSO

t_rr

A.C. 1 minute

Isolation voltage

2500

I_F=0.5 A, I_R=1.0 A, I_RR= 0.25 A

Maximum reverse recovery time (per leg)

125

Thermal characteristics

Maximum thermal resistance junction to case

(per leg)

R_Θjc

0.4

°C/W

* Pulse Test: Pulse width 300 µs, Duty < 2 %

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

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