Datasheet > MUR30060CT

MUR30060CT

更新时间： 2024-01-10 03:05:03

品牌	Logo	应用领域
NAINA		二极管超快速恢复二极管
页数	文件大小	规格书
2页	139K
描述
Super Fast Recovery Diode, 300A

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中文翻译

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数据手册

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MUR30060CT 数据手册

MUR30040CT thru

MUR30060CTR

Naina Semiconductor Ltd.

Super Fast Recovery Diode, 300A

Features

•

Dual Diode Construction

Low Leakage Current

Low forward voltage drop

High surge current capability

Super Fast Switching

TWIN TOWER PACKAGE

Maximum Ratings (T_J= 25^oC unless otherwise specified)

Parameter

Repetitive peak reverse voltage

RMS reverse voltage

Symbol Conditions MUR30040CT(R) MUR30060CT(R) Units

V_RRM

V_RMS

V_DC

400

280

400

300

600

420

600

300

DC blocking voltage

Average forward current

I_F(AV)

T_C≤ 140 ^oC

T_C= 25 ^oC

Non-repetitive forward surge current, half sine-

wave

I_FSM

1500

Electrical Characteristics (T_J= 25^oC unless otherwise specified)

Parameter

Symbol Conditions MUR30040CT(R) MUR30060CT(R) Units

I_F= 50 A

DC forward voltage

DC reverse current

V_F

1.5

1.7

T_J= 25 ^oC

V_R= 50 V

T_J= 25 ^oC

µA

I_R

V_R= 50 V

T_J= 125^oC

I_F= 0.5A

I_R= 1.0A

Maximum Reverse Recovery Time

t_rr

110

150

I_RR= 0.25A

Thermal Characteristics (T_J= 25^oC unless otherwise specified)

Parameter

Symbol

MUR30040CT(R) MUR30060CT(R) Units

Thermal resistance

junction to case

R_thJ-C

1.0

^oC/W

^oC

Operating, storage temperature range

- 40 to +175

T_J, T_stg

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

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