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MUR160 PDF预览

MUR160

更新时间: 2024-11-12 10:41:59
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管
页数 文件大小 规格书
2页 100K
描述
Superfast Effcient Si-Rectifier Diodes

MUR160 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00
风险等级:0.52外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MUR160 数据手册

 浏览型号MUR160的Datasheet PDF文件第2页 
MUR130 ... MUR160  
Version 2011-10-24  
MUR130 ... MUR160  
Superfast Effcient Si-Rectifier Diodes  
Superschnelle Hocheffizienz-Si-Gleichrichterdioden  
Nominal current  
Nennstrom  
1 A  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
300...600 V  
Ø 2.6-0.1  
Plastic case  
DO-41  
Kunststoffgehäuse  
DO-204AL  
Weight approx.  
Gewicht ca.  
0.4 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 0.77±0.07  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings and characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive/Surge peak reverse voltage  
Periodische-/ Stoßspitzensperrspannung  
VRRM / VRSM [V]  
Reverse recovery time  
Sperrverzugszeit  
trr [ns] 1)  
Forward voltage  
Durchlass-Spannung  
VF [V] 2)  
MUR130  
MUR140  
MUR160  
300  
400  
600  
< 50  
< 50  
< 50  
< 1.25  
< 1.25  
< 1.25  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 75°C  
IFAV  
IFRM  
IFSM  
i2t  
1 A 1)  
6 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
32/35 A  
5 A2s  
Rating for fusing – Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+175°C  
-50...+175°C  
Leakage current  
Sperrstrom  
Tj = 25°C  
Tj = 125°C VR = VRRM  
VR = VRRM  
IR  
IR  
< 5 µA  
< 100 µA  
Thermal resistance junction to ambient air  
RthA  
< 45 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
Thermal resistance junction to leads  
RthL  
< 15 K/W  
Wärmewiderstand Sperrschicht – Anschlussdraht  
1
2
1
Tj = 25°C, IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A  
Tj = 25°C, IF = 1A  
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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