MUR1520G thru MUR1560G
Pb
MUR1520G/MUR1540G/MUR1560G
Pb Free Plating Product
16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes
TO-220AC/TO-220C-2L
Unit : inch (mm)
Features
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Latest P/G technology with ultra fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Application
Automotive Inverters and Solar Inverters
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Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
.038(0.96)
.019(0.50)
.025(0.65)MAX
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Case: Heatsink TO-220-2L
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
Internal Configuration
Base Backside
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Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL
UNIT
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
MUR1520G
MUR1540G
MUR1560G
400
280
400
VRRM
VRMS
VDC
200
140
200
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward
I(AV)
16.0
A
Rectified Current
@TA =125℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
250
A
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 16.0A DC
0.95
VF
IR
1.50
V
1.25
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
5.0
50
μA
@TJ=125℃
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
TRR
CJ
nS
pF
35-50
80
16
RθJA
℃/W
℃
-55 to + 150
Operating and Storage Temperature Range
TJ,TSTG
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal resistance junction to ambient
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.