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MUN5316DW1T1

更新时间: 2024-01-01 21:10:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
34页 284K
描述
Dual Bias Resistor Transistors

MUN5316DW1T1 数据手册

 浏览型号MUN5316DW1T1的Datasheet PDF文件第2页浏览型号MUN5316DW1T1的Datasheet PDF文件第3页浏览型号MUN5316DW1T1的Datasheet PDF文件第4页浏览型号MUN5316DW1T1的Datasheet PDF文件第5页浏览型号MUN5316DW1T1的Datasheet PDF文件第6页浏览型号MUN5316DW1T1的Datasheet PDF文件第7页 
MUN5311DW1T1 Series  
Preferred Devices  
Dual Bias Resistor  
Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the MUN5311DW1T1 series,  
two complementary BRT devices are housed in the SOT−363 package  
which is ideal for low power surface mount applications where board  
space is at a premium.  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
Features  
Simplifies Circuit Design  
Reduces Board Space  
6
1
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
Pb−Free Package is Available  
SOT−363  
CASE 419B  
STYLE 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
MARKING DIAGRAM  
and Q , − minus sign for Q (PNP) omitted)  
2
1
6
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
d
XX  
Collector-Emitter Voltage  
Collector Current  
V
50  
Vdc  
1
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
XX= Specific Device Code  
d
Characteristic  
= Date Code  
(One Junction Heated)  
= (See Page 2)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
187 (Note 1)  
256 (Note 2)  
1.5 (Note 1)  
2.0 (Note 2)  
mW  
D
T = 25°C  
A
Derate above 25°C  
mW/°C  
°C/W  
ORDERING AND DEVICE MARKING  
INFORMATION  
See detailed ordering, shipping, and specific marking  
information in the table on page 2 of this data sheet.  
Thermal Resistance −  
Junction-to-Ambient  
R
670 (Note 1)  
490 (Note 2)  
q
JA  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Preferred devices are recommended choices for future use  
and best overall value.  
Total Device Dissipation  
P
D
250 (Note 1)  
385 (Note 2)  
2.0 (Note 1)  
3.0 (Note 2)  
mW  
T = 25°C  
A
Derate above 25°C  
mW/°C  
°C/W  
°C/W  
°C  
Thermal Resistance −  
Junction-to-Ambient  
R
493 (Note 1)  
325 (Note 2)  
q
JA  
Thermal Resistance −  
Junction-to-Lead  
R
188 (Note 1)  
208 (Note 2)  
q
JL  
Junction and Storage Temperature T , T  
55 to +150  
J
stg  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 9  
MUN5311DW1T1/D  
 

MUN5316DW1T1 替代型号

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