Datasheet > MUN5138T1G

MUN5138T1G

更新时间： 2024-02-19 21:25:30

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
11页	144K
描述
PNP Transistors with Monolithic Bias Resistor Network

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技术参数
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MUN5138T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	4 weeks	风险等级：	5.78
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	160
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.31 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MUN5138T1G 数据手册

MUN2138, MMUN2138L,

MUN5138, DTA123TE,

DTA123TM3, NSBA123TF3

Digital Transistors (BRT)

R1 = 2.2 kW, R2 = 8 kW

http://onsemi.com

PIN CONNECTIONS

PNP Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

SC−59

CASE 318D

STYLE 1

XX MG

SOT−23

CASE 318

STYLE 6

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

XXX MG

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

SC−70/SOT−323

CASE 419

XX MG

CBO

STYLE 3

CEO

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

February, 2013 − Rev. 2

DTA123T/D

12 3 4 5 6 7...11

中文翻译

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与MUN5138T1G相关器件

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MUN5140	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = k
MUN5140T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = k
MUN5141	ONSEMI	获取价格	Digital Transistors (BRT)
MUN5141T1G	ONSEMI	获取价格	Digital Transistors (BRT)
MUN51XXDW1T1	MOTOROLA	获取价格	Dual Bias Resistor Transistors
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MUN5211	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5211	WEITRON	获取价格	NPN Silicon Bias Resistor Transistor
MUN5211DW	WEITRON	获取价格	Surface Mount Dual Bias Resistor Transistor NPN Silicon
MUN5211DW	MOTOROLA	获取价格	Dual Bias Resistor Trasnsistors

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