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MUN5115T3 PDF预览

MUN5115T3

更新时间： 2024-02-21 11:03:43
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
8页 139K
描述
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN

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中文翻译

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MUN5115T3 技术参数

生命周期：Transferred零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.48
其他特性：BUILT-IN BIAS RESISTORS最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：160JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP功耗环境最大值：0.15 W
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
VCEsat-Max：0.25 VBase Number Matches：1

MUN5115T3 数据手册

 浏览型号MUN5115T3的Datasheet PDF文件第2页浏览型号MUN5115T3的Datasheet PDF文件第3页浏览型号MUN5115T3的Datasheet PDF文件第4页浏览型号MUN5115T3的Datasheet PDF文件第5页浏览型号MUN5115T3的Datasheet PDF文件第6页浏览型号MUN5115T3的Datasheet PDF文件第7页 
MUN5115DW1,  
NSBA114TDXV6,  
NSBA114TDP6  
Dual PNP Bias Resistor  
Transistors  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
R1 = 10 kW, R2 = 8 kW  
PNP Transistors with Monolithic Bias  
Resistor Network  
(3)  
(1)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
Simplifies Circuit Design  
Reduces Board Space  
MARKING DIAGRAMS  
Reduces Component Count  
6
S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
SOT−363  
CASE 419B  
0E M G  
G
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
1
Compliant  
MAXIMUM RATINGS  
A
(T = 25C, common for Q and Q , unless otherwise noted)  
SOT−563  
CASE 463A  
1
0E M G  
1
2
G
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
CEO  
V
50  
Vdc  
T
MG  
SOT−963  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
G
CASE 527AD  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
5
Vdc  
0E/T  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
*Date Code orientation may vary depending  
upon manufacturing location.  
†
Device  
Package  
Shipping  
MUN5115DW1T1G,  
SMUN5115DW1T1G  
SOT−363  
3,000/Tape & Reel  
NSBA114TDXV6T1G  
NSBA114TDXV6T5G  
NSBA114TDP6T5G  
SOT−563  
SOT−563  
SOT−963  
4,000/Tape & Reel  
8,000/Tape & Reel  
8,000/Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTA114TD/D  
12345678

中文翻译

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