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MUN5130DW1T1G

更新时间： 2024-01-23 00:29:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
20页	148K
描述
Dual Bias Resistor Transistors

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MUN5130DW1T1G 数据手册

MUN5111DW1T1 Series

Preferred Devices

Dual Bias Resistor

Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base resistor

and a base−emitter resistor. These digital transistors are designed to

replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single

device. In the MUN5111DW1T1 series, two BRT devices are housed in

the SOT−363 package which is ideal for low−power surface mount

applications where board space is at a premium.

(3)

(2)

(1)

Features

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb−Free Packages are Available

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

SOT−363

CASE 419B

STYLE 1

Rating

Symbol

Value

−50

−100

Unit

Vdc

Collector-Base Voltage

CBO

Collector-Emitter Voltage

Collector Current

Vdc

CEO

mAdc

THERMAL CHARACTERISTICS

MARKING DIAGRAM

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

T = 25°C

187 (Note 1)

256 (Note 2)

xx M G

1.5 (Note 1) mW/°C

2.0 (Note 2)

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

670 (Note 1) °C/W

490 (Note 2)

Characteristic

(Both Junctions Heated)

xx = Device Code (Refer to page 2)

Symbol

Max

Unit

= Date Code

Total Device Dissipation

250 (Note 1)

385 (Note 2)

2.0 (Note 1) mW/°C

3.0 (Note 2)

= Pb−Free Package

T = 25°C

(Note: Microdot may be in either location)

Derate above 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the table on

page 2 of this data sheet.

Thermal Resistance,

Junction-to-Ambient

493 (Note 1) °C/W

325 (Note 2)

Thermal Resistance,

Junction-to-Lead

188 (Note 1) °C/W

208 (Note 2)

DEVICE MARKING INFORMATION

Junction and Storage Temperature Range T , T

−55 to +150

°C

See specific marking information in the device marking table

on page 2 of this data sheet.

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Preferred devices are recommended choices for future use

and best overall value.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 6

MUN5111DW1T1/D

12 3 4 5 6 7...20

中文翻译

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与MUN5130DW1T1G相关器件

型号	品牌	获取价格	描述	数据表
MUN5130DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5130DW1T3	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
MUN5130DW-G	WEITRON	获取价格	Transistor
MUN5130-G	WEITRON	获取价格	Transistor
MUN5130T1	LRC	获取价格	Bias Resistor Transistor
MUN5130T1	ONSEMI	获取价格	Bias Resistor Transistor
MUN5130T1	MOTOROLA	获取价格	PNP SILICON BIAS RESISTOR TRANSISTOR
MUN5130T1G	ONSEMI	获取价格	Bias Resistor Transistor
MUN5130T3	MOTOROLA	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN
MUN5130T3	ONSEMI	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN

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