Datasheet > MUN5130DW1T1

MUN5130DW1T1

更新时间： 2024-01-14 03:14:34

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
11页	281K
描述
Dual Bias Resistor Transistors

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中文翻译

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技术参数
数据手册

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MUN5130DW1T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.86	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	3	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.15 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

MUN5130DW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

MUN5111DW1T1

Series

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low–power surface mount applications where board space is at a premium.

. Simplifies Circuit Design

. Reduces Board Space

SOT 363

. Reduces Component Count

CASE 419B STYLE1

. Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

R₁

R₂

Q₂

Rating

Symbol Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

–50

R₂

Q₁

R₁

–100 mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

mW/°C

°C/W

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

R _θJA

xx = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN5111dw–1/11

12 3 4 5 6 7...11

中文翻译

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与MUN5130DW1T1相关器件

型号	品牌	获取价格	描述	数据表
MUN5130DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5130DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5130DW1T3	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
MUN5130DW-G	WEITRON	获取价格	Transistor
MUN5130-G	WEITRON	获取价格	Transistor
MUN5130T1	LRC	获取价格	Bias Resistor Transistor
MUN5130T1	ONSEMI	获取价格	Bias Resistor Transistor
MUN5130T1	MOTOROLA	获取价格	PNP SILICON BIAS RESISTOR TRANSISTOR
MUN5130T1G	ONSEMI	获取价格	Bias Resistor Transistor
MUN5130T3	MOTOROLA	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN

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