Datasheet > MTP9575L3

MTP9575L3

更新时间： 2024-11-28 05:51:03

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
6页	283K
描述
P-Channel Enhancement Mode Power MOSFET

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数据手册

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MTP9575L3 数据手册

Spec. No. : C404L3

Issued Date : 2007.06.22

Revised Date :

CYStech Electronics Corp.

Page No. : 1/6

P-Channel Enhancement Mode Power MOSFET

MTP9575L3

Features

• Simple Drive Requirement

• Low On-resistance

• Fast switching Characteristic

• Pb-free package

Symbol

Outline

SOT-223

MTP9575L3

G：Gate

D：Drain

S：Source

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

IDM

-60

±25

-4.0 *1

-3.2 *1

-20 *1

W/°C

°C

Continuous Drain Current @VGS=-10V, TA=25°C

Continuous Drain Current @VGS=-10V, TA=70°C

Pulsed Drain Current

Total Power Dissipation (TA=25℃)

Linear Derating Factor

0.02

-55~+150

45 *2

Operating Junction and Storage Temperature

Thermal Resistance, Junction-to-ambient, max

Tj, Tstg

Rth,j-a

°C/W

Note : *1 Pulse width limited by maximum junction temperature

*2. Surface mounted on 1 in copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad

MTP405J3

CYStek Product Specification

12 3 4 5 6

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