MTP9N25

更新时间： 2024-10-01 22:45:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	209K
描述
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

9.0 AMPERES

250 VOLTS

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

= 0.45 OHM

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

250

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

250

Gate–to–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

9.0

5.7

Adc

Apk

Total Power Dissipation

Derate above 25°C

0.64

Watts

W/°C

Operating and Storage Temperature Range

T , T

J stg

–55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 80 Vdc, V = 10 Vdc, Peak I = 9.0 Apk, L = 3.0 mH, R = 25 Ω)

122

GS L G

Thermal Resistance — Junction to Case

— Junction to Ambient

θJC

θJA

1.56

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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与MTP9N25相关器件

型号	品牌	获取价格	描述	数据表
MTP9N25E	MOTOROLA	获取价格	TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM
MTP-ADPT	CONEC	获取价格	Fiber Optic Connector Adapter
MTPC5810	ETC	获取价格	NPN-OUTPUT DC-INPUT OPTOCOUPLER
MTPD1346_010	MARKTECH	获取价格	Sensitivity Wavelength Range: 800nm ~ 1750nm
MTPD1346_030	MARKTECH	获取价格	High Speed InGaAs PIN Photodiode
MTPD1346_100	MARKTECH	获取价格	High Speed InGaAs PIN Photodiode
MTPD1346-010	MARKTECH	获取价格	Sensitivity Wavelength Range: 800nm ~ 1750nm
MTPD1346-010_12	MARKTECH	获取价格	Sensitivity Wavelength Range: 800nm ~ 1750nm
MTPD1346-030	MARKTECH	获取价格	Sensitivity Wavelength Range: 800nm ~ 1750nm
MTPD1346-030_12	MARKTECH	获取价格	Sensitivity Wavelength Range: 800nm ~ 1750nm

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