Datasheet > MTP2603Q6

MTP2603Q6

更新时间： 2024-01-18 06:18:04

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
5页	383K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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MTP2603Q6 数据手册

Spec. No. : C394Q6

Issued Date : 2006.11.24

Revised Date :

CYStech Electronics Corp.

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

MTP2603Q6

Page No. : 1/5

Description

The MTP2603Q6 is a P-channel enhancement-mode MOSFET, providing the designer with

the best combination of fast switching, ruggedized device design, low on-resistance and cost

effectiveness.

The TSOP-6 package is universally preferred for all commercial-industrial surface mount

applications.

Features

Equivalent Circuit

• Simple drive requirement

• Low on-resistance

• Small package outline

• Pb-free package

MTP2603Q6

G：Gate

S：Source

D：Drain

Absolute Maximum Ratings (Ta=25°C)

Parameter

Drain-Source Voltage

Symbol

Limits

-20

Unit

VDS

VGS

I^D

Gate-Source Voltage

±12

-5

Continuous Drain Current @TA=25 °C (Note 1)

Continuous Drain Current @TA=70 °C (Note 1)

Pulsed Drain Current (Note 2, 3)

I^D

-4

IDM

-20

Total Power Dissipation @ TA=25 °C

Linear Derating Factor

0.016

-55~+150

62.5

W / °C

°C

Operating Junction Temperature

Storage Temperature

Tstg

Thermal Resistance, Junction-to-Ambient (Note 1)

Rth,ja

°C/W

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.

2.Pulse width limited by maximum junction temperature.

3.Pulse Width ≤300μs, Duty Cycle≤2%

MTP2603Q6

CYStek Product Specification

12 3 4 5

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