MTP10N40

更新时间： 2024-02-01 16:23:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	252K
描述
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

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MTP10N40 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.82
外壳连接：	DRAIN	配置：	SINGLE
最小漏源击穿电压：	400 V	最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	0.55 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	功耗环境最大值：	125 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON

MTP10N40 数据手册

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by MTP10N40E/D

SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications such as power supplies, PWM motor

controls and other inductive loads, the avalanche energy capability

is specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

10 AMPERES

400 VOLTS

= 0.55 OHMS

DS(on)

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Low Stored Gate Charge for Efficient Switching

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the

Avalanche Mode

•

Source–to–Drain Diode Recovery Time Comparable to Discrete

Fast Recovery Diode

CASE 221A–06, Style 5

TO-220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

400

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

400

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–repetitive

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Pulsed

Adc

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

–65 to 150

°C

stg

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T < 150°C)

Single Pulse Drain–to–Source Avalanche Energy — T = 25°C

520

DSR(1)

Single Pulse Drain–to–Source Avalanche Energy — T = 100°C

Repetitive Pulse Drain–to–Source Avalanche Energy

DSR(2)

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient°

1.0

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds

275

(1) V

= 50 V, I = 10 A

(2) Pulse Width and frequency is limited by T (max) and thermal response

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTP10N40相关器件

型号	品牌	获取价格	描述	数据表
MTP10N40E	MOTOROLA	获取价格	TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
MTP10N40E16	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
MTP10N40EA	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N40EA16A	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N40EAF	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N40EAJ	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N40EC	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP10N40ED1	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
MTP10N40EL	MOTOROLA	获取价格	暂无描述
MTP10N40EN	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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