MTP10N40EUA

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摩托罗拉 - MOTOROLA		/
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MTP10N40EUA 数据手册

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SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications such as power supplies, PWM motor

controls and other inductive loads, the avalanche energy capability

is specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

10 AMPERES

400 VOLTS

= 0.55 OHMS

DS(on)

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Low Stored Gate Charge for Efficient Switching

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the

Avalanche Mode

•

Source–to–Drain Diode Recovery Time Comparable to Discrete

Fast Recovery Diode

CASE 221A–06, Style 5

TO-220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

400

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

400

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–repetitive

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Pulsed

Adc

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

–65 to 150

°C

stg

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T < 150°C)

Single Pulse Drain–to–Source Avalanche Energy — T = 25°C

520

DSR(1)

Single Pulse Drain–to–Source Avalanche Energy — T = 100°C

Repetitive Pulse Drain–to–Source Avalanche Energy

DSR(2)

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient°

1.0

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds

275

(1) V

= 50 V, I = 10 A

(2) Pulse Width and frequency is limited by T (max) and thermal response

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTP10N40EUA相关器件

型号	品牌	获取价格	描述	数据表
MTP10N40EW	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
MTP10N40EWC	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
MTP12N05	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
MTP12N05E	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR
MTP12N05E16	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
MTP12N05EA	MOTOROLA	获取价格	12 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP12N05EAF	MOTOROLA	获取价格	12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP12N05EAJ	MOTOROLA	获取价格	12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP12N05EC	MOTOROLA	获取价格	12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP12N05ED1	MOTOROLA	获取价格	12 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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