Datasheet > MTEH0N25J3

MTEH0N25J3

更新时间： 2024-11-12 01:17:55

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	399K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTEH0N25J3 数据手册

Spec. No. : C895J3

Issued Date : 2014.04.23

Revised Date : 2014.04.28

Page No. : 1/9

CYStech Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

BVDSS

250V

3.5A

MTEH0N25J3

ID@VGS=10V

720mΩ

VGS=10V, ID=3A

VGS=6V, ID=2A

RDSON(TYP)

Features

• Low Gate Charge

• Simple Drive Requirement

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

MTEH0N25J3

TO-252(DPAK)

D S

G：Gate

D：Drain

S：Source

Ordering Information

Device

Package

TO-252

(Pb-free lead plating and halogen-free package)

Shipping

2500 pcs / Tape & Reel

MTEH0N25J3-0-T3-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTEH0N25J3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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