Datasheet > MTE8D0N08H8-0-T6-G

MTE8D0N08H8-0-T6-G

更新时间： 2024-11-22 01:17:59

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	472K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTE8D0N08H8-0-T6-G 数据手册

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Spec. No. : C991H8

Issued Date : 2014.12.09

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode Power MOSFET

BVDSS

ID@VGS=10V, TC=25°C

80V

50A

32A

15A

12A

MTE8D0N08H8

ID@VGS=10V, TC=100°C

ID@VGS=10V, TA=25°C

ID@VGS=10V, TA=70°C

RDS(ON)@VGS=10V, ID=30A

RDS(ON)@VGS=7V, ID=20A

Features

7.1 mΩ(typ)

7.9 mΩ(typ)

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Pb-free lead plating and Halogen-free package

Symbol

Outline

DFN5×6

MTE8D0N08H8

Pin 1

G：Gate D：Drain S：Source

Ordering Information

Device

Package

DFN5×6

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / Tape & Reel

MTE8D0N08H8-0-T6-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTE8D0N08H8

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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