Datasheet > MTE65N15J3

MTE65N15J3

更新时间： 2022-03-19 06:55:31

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
10页	326K
描述
N-Channel Enhancement Mode Power MOSFET

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MTE65N15J3 数据手册

Spec. No. : C873J3

Issued Date : 2012.12.18

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 10

N-Channel Enhancement Mode Power MOSFET

BV^DSS

150V

20A

55 mΩ(typ)

61mΩ(typ)

MTE65N15J3

RDS(ON)@VGS=10V, ID=15A

RDS(ON)@VGS=6V, ID=10A

Description

The MTE65N15J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-252 package is universally preferred for all commercial-industrial applications

Features

• Low On Resistance

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• RoHS compliant package

Symbol

Outline

MTE65N15J3

TO-252AB

TO-252AA

D S

G D S

G：Gate D：Drain S：Source

MTE65N15J3

CYStek Product Specification

12 3 4 5 6 7...10

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