Datasheet > MTE6D5N12B0F3

MTE6D5N12B0F3

更新时间： 2022-02-26 13:26:49

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	677K
描述
N-Channel Enhancement Mode Power MOSFET

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数据手册

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MTE6D5N12B0F3 数据手册

Spec. No. : C935F3

Issued Date : 2018.09.19

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 9

N-Channel Enhancement Mode Power MOSFET

MTE6D5N12B0F3

BVDSS

120V

112A

ID@VGS=10V, TC=25°C

9.3A

ID@VGS=10V, TA=25°C

RDS(ON)@VGS=10V, ID=50A

Features

8.1mΩ(typ)

 Low On Resistance

 Simple Drive Requirement

 Low Gate Charge

 Fast Switching Characteristic

 RoHS compliant package

Symbol

Outline

TO-263

MTE6D5N12B0F3

G：Gate D：Drain S：Source

Ordering Information

Device

Package

TO-263

Shipping

MTE6D5N12B0F3-0-T7-X

800 pcs / Tape & Reel

(Pb-free lead plating and RoHS compliant package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T7 : 800 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE6D5N12B0F3

CYStek Product Specification

12 3 4 5 6 7...9

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